ISC058N04NM5ATMA1 vs ISC016N08NM8ATMA1 Сравнение
Подробное сравнение бок о бок ISC058N04NM5ATMA1 от Infineon и ISC016N08NM8ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 ✓ Активен
Сравнение характеристик
| Параметр | ISC058N04NM5ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,60 | $1,02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V Normal Level | — |
| Тип транзистора | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25C) | 63 A | — |
| Continuous Drain Current (ID, Ta=25C) | 17 A | — |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.4 V | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 42 W | — |
| Корпус | PG-TDSON-8 FL (SuperSO8 5x6 mm) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | Trench-gate OptiMOS 8 (silicon) |
| Диапазон рабочих температур | -55C to +175C | -55 C to +150 C (junction) |
| RoHS Compliance | RoHS Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 | — |
| Gate Drive Level | Normal Level (10V VGS recommended) | — |
| Product Series | — | OptiMOS 8 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 80 V |
| Gate-Source Voltage (VGS max) | — | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | — | 268 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 1.6 mOhm |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Статус RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Lead-free (per Infineon product page) |
| Уровень MSL | — | 1 (per JEDEC J-STD-020E classification for SuperSO8) |