ISC058N04NM5ATMA1 vs ISC016N08NM8ATMA1 Comparaison
Comparaison détaillée côte à côte de ISC058N04NM5ATMA1 par Infineon et ISC016N08NM8ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 ✓ Actif
Comparaison des spécifications
| Paramètre | ISC058N04NM5ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,60 | $1,02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V Normal Level | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25C) | 63 A | — |
| Continuous Drain Current (ID, Ta=25C) | 17 A | — |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.4 V | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 42 W | — |
| Boîtier | PG-TDSON-8 FL (SuperSO8 5x6 mm) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | Trench-gate OptiMOS 8 (silicon) |
| Plage de température de fonctionnement | -55C to +175C | -55 C to +150 C (junction) |
| RoHS Compliance | RoHS Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 | — |
| Gate Drive Level | Normal Level (10V VGS recommended) | — |
| Product Series | — | OptiMOS 8 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 80 V |
| Gate-Source Voltage (VGS max) | — | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | — | 268 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 1.6 mOhm |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Statut RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Lead-free (per Infineon product page) |
| Niveau MSL | — | 1 (per JEDEC J-STD-020E classification for SuperSO8) |