ISC0805NLSATMA1 vs IPT067N20NM6ATMA1 Vergleich
Detaillierter Direktvergleich von ISC0805NLSATMA1 von Infineon und IPT067N20NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC0805NLSATMA1 | IPT067N20NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,82 | $4,85 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 5 | OptiMOS 6 |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 200 V |
| Continuous Drain Current (ID) at TA=25°C | 13 A | — |
| Continuous Drain Current (ID) at TC=25°C | 71 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 74 W | — |
| On-Resistance RDS(on) max at VGS=10V | 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] | — |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | — |
| Gate Charge Qg typ at VGS=4.5V | 16 nC | — |
| Input Capacitance Ciss | 2.2 nF | — |
| Reverse Transfer Capacitance Crss | 23 pF | — |
| Output Capacitance Coss | 360 pF | — |
| Gehäuse | PG-TDSON-8-46 (SuperSO8 5x6) | PG-HSOF-8-1 (8-pin + exposed tab) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +150 °C | -55C to +150C (junction) |
| RoHS-Status | Compliant | Compliant |
| Continuous Drain Current (ID) at TA=25C | — | 15.3 A |
| Continuous Drain Current (ID) at TC=25C | — | 137 A |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Technology | — | Trench-gate OptiMOS 6 silicon |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| On-Resistance RDS(on) typ | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: total gate charge] |
| Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free | — | Yes |
| MSL-Level | — | [DATA_NEEDED: MSL moisture sensitivity level] |
| Configuration | — | Single N-channel |