ISC0805NLSATMA1 vs IPT067N20NM6ATMA1 Comparaison
Comparaison détaillée côte à côte de ISC0805NLSATMA1 par Infineon et IPT067N20NM6ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | ISC0805NLSATMA1 | IPT067N20NM6ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,82 | $4,85 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 5 | OptiMOS 6 |
| Type de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 200 V |
| Continuous Drain Current (ID) at TA=25°C | 13 A | — |
| Continuous Drain Current (ID) at TC=25°C | 71 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 74 W | — |
| On-Resistance RDS(on) max at VGS=10V | 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] | — |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | — |
| Gate Charge Qg typ at VGS=4.5V | 16 nC | — |
| Input Capacitance Ciss | 2.2 nF | — |
| Reverse Transfer Capacitance Crss | 23 pF | — |
| Output Capacitance Coss | 360 pF | — |
| Boîtier | PG-TDSON-8-46 (SuperSO8 5x6) | PG-HSOF-8-1 (8-pin + exposed tab) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55 °C to +150 °C | -55C to +150C (junction) |
| Statut RoHS | Compliant | Compliant |
| Continuous Drain Current (ID) at TA=25C | — | 15.3 A |
| Continuous Drain Current (ID) at TC=25C | — | 137 A |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Technology | — | Trench-gate OptiMOS 6 silicon |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| On-Resistance RDS(on) typ | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: total gate charge] |
| Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free | — | Yes |
| Niveau MSL | — | [DATA_NEEDED: MSL moisture sensitivity level] |
| Configuration | — | Single N-channel |