ISC088N08NM6ATMA1 vs IAUCN08S7L033ATMA1 Vergleich
Detaillierter Direktvergleich von ISC088N08NM6ATMA1 von Infineon und IAUCN08S7L033ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC088N08NM6ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at Ta=25 C | 12.1 A | — |
| Continuous Drain Current (ID) at Tc=25 C | 59 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V (typical Infineon OptiMOS 7 limit) |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) max at VGS=10 V | 8.8 mOhm | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Ta=25 C | 3 W | — |
| Power Dissipation (PD) at Tc=25 C | 71 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | PG-TDSON-8 FL | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020, typical for this package) |
| RoHS-Status | Compliant (per distributor listings) | Compliant |
| Technology | Trench-gate OptiMOS 6 | OptiMOS 7 trench MOSFET |
| Series | — | Automotive OptiMOS 7 |
| Transistortyp | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Betriebstemperaturbereich | — | -55°C to +175°C (TJ) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |