ISC088N08NM6ATMA1 vs IAUCN08S7L033ATMA1 比較
詳細な並列比較: ISC088N08NM6ATMA1 メーカー: Infineon および IAUCN08S7L033ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | ISC088N08NM6ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at Ta=25 C | 12.1 A | — |
| Continuous Drain Current (ID) at Tc=25 C | 59 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V (typical Infineon OptiMOS 7 limit) |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) max at VGS=10 V | 8.8 mOhm | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Ta=25 C | 3 W | — |
| Power Dissipation (PD) at Tc=25 C | 71 W | — |
| 動作接合温度 | -55 C to +175 C | — |
| パッケージ | PG-TDSON-8 FL | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020, typical for this package) |
| RoHS ステータス | Compliant (per distributor listings) | Compliant |
| Technology | Trench-gate OptiMOS 6 | OptiMOS 7 trench MOSFET |
| Series | — | Automotive OptiMOS 7 |
| トランジスタタイプ | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| 動作温度範囲 | — | -55°C to +175°C (TJ) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |