ISC240P06LMATMA1 vs BSC076N04NDATMA1 Vergleich
Detaillierter Direktvergleich von ISC240P06LMATMA1 von Infineon und BSC076N04NDATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC240P06LMATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,99 | $0,82 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID, Tc) | -59 A | — |
| On-Resistance RDS(on) max @ VGS=-10V | 24 mΩ | — |
| Power Dissipation (Ta) | 188 W | 2.3 W |
| Technology | OptiMOS trench | Trench MOSFET (OptiMOS 3) |
| Gehäuse | PG-TDSON-8 FL (SuperSO8 5x6) | — |
| Montageart | Surface Mount | Surface Mount |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typical value] | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | -55 C to +175 C |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| Avalanche Rated | Yes (single-pulse) | — |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| REACH Compliance | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Gehäuse / Bauform | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |