ISC240P06LMATMA1 vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of ISC240P06LMATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC240P06LMATMA1

ISC240P06LMATMA1 - 60V P-Channel OptiMOS MOSFET | Infineon

ISC240P06LMATMA1 βœ“ Active
Infineon
BSC076N04NDATMA1

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 βœ“ Active

Specification Comparison

Parameter ISC240P06LMATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.99 $0.82
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -60 V β€”
Continuous Drain Current (ID, Tc) -59 A β€”
On-Resistance RDS(on) max @ VGS=-10V 24 mΞ© β€”
Power Dissipation (Ta) 188 W 2.3 W
Technology OptiMOS trench Trench MOSFET (OptiMOS 3)
Package PG-TDSON-8 FL (SuperSO8 5x6) β€”
Mounting Type Surface Mount Surface Mount
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] β€”
Total Gate Charge Qg typ [DATA_NEEDED: Qg typical value] β€”
Operating Junction Temperature -55 Β°C to +175 Β°C -55 C to +175 C
MSL Level 1 (per JEDEC J-STD-020) β€”
Avalanche Rated Yes (single-pulse) β€”
Lead-Free / RoHS Yes (per Infineon product page) β€”
REACH Compliance Compliant β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 3
Configuration β€” Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max β€” 40 V
Continuous Drain Current (ID) β€” 20 A (Tc)
Gate Threshold Voltage (VGS(th)) β€” 4 V (max, typical)
On-Resistance RDS(on) max β€” 7.6 mOhm
Power Dissipation (Tc) β€” 65 W
Qgd/Qgs Ratio β€” < 0.8 (high shot-through immunity)
Package / Case β€” PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free β€” Compliant (Pb-free plating)
FET Type β€” 2x N-Channel MOSFET array

Datasheets & Resources

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