ISK057N04LM6ATSA1 vs BSC014N04LSATMA1 Vergleich
Detaillierter Direktvergleich von ISK057N04LM6ATSA1 von Infineon und BSC014N04LSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISK057N04LM6ATSA1 | BSC014N04LSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,30 | $0,74 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Continuous Drain Current (ID) at Ta=25C | 15 A | — |
| Continuous Drain Current (ID) at Tc=25C | 64 A | — |
| Power Dissipation (PD) at Ta | 2.1 W | — |
| Power Dissipation (PD) at Tc | 39.1 W | — |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: typical RDS(on) at 10V] | — |
| On-Resistance RDS(on) at VGS=4.5V | 8.3 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | — |
| Total Gate Charge (Qg) at VGS=10V | 12 nC | — |
| Input Capacitance (Ciss) | 870 pF | — |
| Output Capacitance (Coss) | 290 pF | — |
| Reverse Transfer Capacitance (Crss) | 21 pF | — |
| Betriebstemperaturbereich | -55C to +150C | -55C to +175C |
| Gehäuse | PG-VSON-6-1 (PQFN 2x2 mm) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Technology | OptiMOS 6 Trench | Trench (OptiMOS 5, thin-wafer) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 96 W |
| Gate-Source Voltage (VGS) max | — | 20 V |
| MSL-Level | — | 1 (unlimited) |