ISZ033N03LF2SATMA1 vs ISC052N03LF2SATMA1 Vergleich
Detaillierter Direktvergleich von ISZ033N03LF2SATMA1 von Infineon und ISC052N03LF2SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISZ033N03LF2SATMA1 | ISC052N03LF2SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,68 | $0,35 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Continuous Drain Current (ID) at TC=25C | 109 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TA=25C | 3 W | — |
| Power Dissipation (PD) at TC=25C | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | PG-TSDSON-8 FL (8-pin) | PG-TDSON-8-62 (TDSON EP) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 | Trench MOSFET (OptiMOS 5) |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 30V |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 74 A |
| On-Resistance RDS(on) max at VGS=10V | — | 5.2 mΩ |
| Power Dissipation (PD) at TA=25°C | — | 3 W |
| Power Dissipation (PD) at TC=25°C | — | 52 W |
| Betriebstemperaturbereich | — | -55°C to +150°C |
| Polarity | — | N-Channel |
| Pin-Anzahl | — | 8 |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |