ISZ056N03LF2SATMA1 vs IMLT40R011M2HXTMA1 Vergleich
Detaillierter Direktvergleich von ISZ056N03LF2SATMA1 von Infineon und IMLT40R011M2HXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | ISZ056N03LF2SATMA1 | IMLT40R011M2HXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,49 | $12,80 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | StrongIRFET 2 | — |
| Transistortyp | N-Channel MOSFET | N-Channel SiC MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 400 V |
| Continuous Drain Current (ID) at Ta | 16 A | — |
| Continuous Drain Current (ID) at Tc | 72 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | 4.5 V (benchmark) |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm | — |
| On-Resistance (RDS(on)) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| Betriebstemperaturbereich | -55 C to +175 C | — |
| Gehäuse | PG-TSDSON-8 (PQFN 3.3x3.3 mm) | PG-HDSOP-16-8 (surface mount, top-side cooled) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Product Family | — | CoolSiC MOSFET 400V G2 |
| Continuous Drain Current (ID, Tc) | — | 144 A |
| Power Dissipation (PD, Tc) | — | 429 W |
| On-State Resistance (RDS(on)) | — | 11 mΩ (typ) |
| Recommended Gate Drive Voltage | — | 0 V to 18 V |
| Technology | — | Silicon Carbide (SiC) Gen-2 |
| Body Diode | — | Commutation-robust fast body diode, low Qrr |
| Avalanche Rating | — | 100% avalanche tested |
| Interconnection Technology | — | XT (best-in-class thermal performance) |
| Operating Mode | — | Enhancement mode |
| Target Topologies | — | 2- and 3-level hard- and soft-switching |
| Target Applications | — | AI server PSU, SMPS, motor drives |