ISZ056N03LF2SATMA1 vs IMLT40R011M2HXTMA1 비교

다음의 상세 나란히 비교: ISZ056N03LF2SATMA1 제조: Infineon 및 IMLT40R011M2HXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 ISZ056N03LF2SATMA1 IMLT40R011M2HXTMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.49 $12.80
Manufacturer Infineon Technologies Infineon Technologies
Series StrongIRFET 2 —
트랜지스터 유형 N-Channel MOSFET N-Channel SiC MOSFET
Drain-Source Voltage (VDS) 30 V 400 V
Continuous Drain Current (ID) at Ta 16 A —
Continuous Drain Current (ID) at Tc 72 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) 2.35 V (typ) 4.5 V (benchmark)
On-Resistance (RDS(on)) max at VGS=10V 5.6 mOhm —
On-Resistance (RDS(on)) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 52 W —
동작 온도 범위 -55 C to +175 C —
패키지 PG-TSDSON-8 (PQFN 3.3x3.3 mm) PG-HDSOP-16-8 (surface mount, top-side cooled)
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant Compliant
Product Family — CoolSiC MOSFET 400V G2
Continuous Drain Current (ID, Tc) — 144 A
Power Dissipation (PD, Tc) — 429 W
On-State Resistance (RDS(on)) — 11 mΩ (typ)
Recommended Gate Drive Voltage — 0 V to 18 V
Technology — Silicon Carbide (SiC) Gen-2
Body Diode — Commutation-robust fast body diode, low Qrr
Avalanche Rating — 100% avalanche tested
Interconnection Technology — XT (best-in-class thermal performance)
Operating Mode — Enhancement mode
Target Topologies — 2- and 3-level hard- and soft-switching
Target Applications — AI server PSU, SMPS, motor drives

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