ISZ056N03LF2SATMA1 vs IMLT40R011M2HXTMA1 Comparación
Comparación detallada lado a lado de ISZ056N03LF2SATMA1 por Infineon y IMLT40R011M2HXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ ActivoInfineon
IMLT40R011M2HXTMA1 - 400V 11mΩ SiC MOSFET CoolSiC G2 | Infineon
IMLT40R011M2HXTMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISZ056N03LF2SATMA1 | IMLT40R011M2HXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,49 | $12,80 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | StrongIRFET 2 | — |
| Tipo de transistor | N-Channel MOSFET | N-Channel SiC MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 400 V |
| Continuous Drain Current (ID) at Ta | 16 A | — |
| Continuous Drain Current (ID) at Tc | 72 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | 4.5 V (benchmark) |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm | — |
| On-Resistance (RDS(on)) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C | — |
| Encapsulado | PG-TSDSON-8 (PQFN 3.3x3.3 mm) | PG-HDSOP-16-8 (surface mount, top-side cooled) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Product Family | — | CoolSiC MOSFET 400V G2 |
| Continuous Drain Current (ID, Tc) | — | 144 A |
| Power Dissipation (PD, Tc) | — | 429 W |
| On-State Resistance (RDS(on)) | — | 11 mΩ (typ) |
| Recommended Gate Drive Voltage | — | 0 V to 18 V |
| Technology | — | Silicon Carbide (SiC) Gen-2 |
| Body Diode | — | Commutation-robust fast body diode, low Qrr |
| Avalanche Rating | — | 100% avalanche tested |
| Interconnection Technology | — | XT (best-in-class thermal performance) |
| Operating Mode | — | Enhancement mode |
| Target Topologies | — | 2- and 3-level hard- and soft-switching |
| Target Applications | — | AI server PSU, SMPS, motor drives |