ISZ056N03LF2SATMA1 vs ISC009N03LF2SATMA1 Vergleich
Detaillierter Direktvergleich von ISZ056N03LF2SATMA1 von Infineon und ISC009N03LF2SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | ISZ056N03LF2SATMA1 | ISC009N03LF2SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,49 | $1,48 |
| Manufacturer | Infineon Technologies | — |
| Series | StrongIRFET 2 | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta | 16 A | 43 A |
| Continuous Drain Current (ID) at Tc | 72 A | 341 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | 2.35 V (typ) |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm | — |
| On-Resistance (RDS(on)) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | 3 W |
| Power Dissipation (PD) at Tc | 52 W | 188 W |
| Betriebstemperaturbereich | -55 C to +175 C | -55 °C to +175 °C (junction, [DATA_NEEDED: exact operating range from datasheet]) |
| Gehäuse | PG-TSDSON-8 (PQFN 3.3x3.3 mm) | PG-TDSON-8-62 (SuperSO8 5x6) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Technology | — | OptiMOS™ trench |
| On-Resistance RDS(on) max | — | 0.9 mΩ |
| Gate Drive Voltage (VGS) | — | 10 V (typical for rated RDS(on)) |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |