ISZ072N06NM6ATMA1 vs ISZ173N15NM6ATMA1 Vergleich
Detaillierter Direktvergleich von ISZ072N06NM6ATMA1 von Infineon und ISZ173N15NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISZ072N06NM6ATMA1 | ISZ173N15NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $1,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 150 V |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Verlustleistung (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Gehäuse | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TSDSON-8 FL |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C ( Tj max 175C ) | — |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 trench-gate MOSFET |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | — |
| Series | — | OptiMOS 6 150V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 7.9 A |
| Continuous Drain Current (ID) at Tc | — | 48 A |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 94 W |
| Operating Mode | — | Enhancement Mode |
| Application | — | Hard and soft switching, high/low frequency |
| Lead-Free | — | Yes |
| Tape & Reel Quantity | — | 5000 |