ISZ072N06NM6ATMA1 vs ISZ173N15NM6ATMA1 Comparison
Detailed side-by-side comparison of ISZ072N06NM6ATMA1 by Infineon and ISZ173N15NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISZ072N06NM6ATMA1 | ISZ173N15NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 150 V |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Power Dissipation (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Package | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TSDSON-8 FL |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C ( Tj max 175C ) | — |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 trench-gate MOSFET |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | — |
| Series | — | OptiMOS 6 150V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 7.9 A |
| Continuous Drain Current (ID) at Tc | — | 48 A |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 94 W |
| Operating Mode | — | Enhancement Mode |
| Application | — | Hard and soft switching, high/low frequency |
| Lead-Free | — | Yes |
| Tape & Reel Quantity | — | 5000 |