IXDH20N120D1 vs IXDH20N120 Vergleich

Detaillierter Direktvergleich von IXDH20N120D1 von Littelfuse und IXDH20N120 von Littelfuse. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Littelfuse
IXDH20N120 IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD

IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD

IXDH20N120 ✓ Aktiv

Spezifikationsvergleich

Parameter IXDH20N120D1 IXDH20N120
Marke Littelfuse Littelfuse
Kategorie IGBTs IGBTs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,30 $5,20
Polarity N-Channel —
Technology NPT (Non-Punch Through) IGBT with co-packaged FRED —
Collector-Emitter Voltage (VCES) 1200 V 1200 V
Gate-Emitter Voltage (VGES) +/- 20 V —
Continuous Collector Current IC25 38 A (at TC = 25 C) —
Continuous Collector Current IC90 [DATA_NEEDED: IC90 value] —
Pulsed Collector Current (ICM) [DATA_NEEDED: ICM value] [DATA_NEEDED: pulsed collector current 1 ms]
Maximum Power Dissipation (PC) 200 W —
Kollektor-Emitter-Sättigungsspannung (Vce(sat)) 3.0 V typ at IC = 20 A —
Gate Threshold Voltage (VGE(th)) [DATA_NEEDED: VGE(th) value] —
RBSOA Square RBSOA at 1200 V / 38 A (snubberless hard switching) Square (no latch-up) at VGE = 15 V, Rg = 20 ohm, TJ up to 150 C
Short Circuit Withstand Time (tSC) [DATA_NEEDED: tSC value] —
Operating Junction Temperature (TJ) -55 C to +150 C —
Storage Temperature (Tstg) -55 C to +150 C [DATA_NEEDED: storage temperature range]
Package Type TO-247AD (3-pin with tab) —
Montageart Through Hole Through Hole
Integrated Diode Yes - co-packaged FRED (D1 variant) —
RoHS-Status Compliant ROHS3 Compliant
Manufacturer — IXYS (acquired by Littelfuse)
Part Number — IXDH20N120
Device Type — NPT (Non-Punch Through) IGBT
Continuous Collector Current (IC25) — 38 A
Gate-Emitter Voltage (VGES, continuous) — +/- 20 V
Gate-Emitter Voltage (VGEM, transient) — [DATA_NEEDED: VGEM transient rating]
Power Dissipation (PC) — 200 W
Junction Temperature (TJ) — -40C to +150C [DATA_NEEDED: max TJ]
Short-Circuit Withstand (tSC) — 10 us minimum at VCE = VCES, VGE = +/- 15 V, TC = 25 C [DATA_NEEDED: exact value]
Diode Option — Optional ultra-fast FRED (D1 suffix variant: IXDH20N120D1)
Gehäuse — TO-247AD (3-lead)
Operating Mode — N-Channel IGBT

Datenblätter & Ressourcen

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