IXDH20N120D1 vs IXDH20N120 Comparaison
Comparaison détaillée côte à côte de IXDH20N120D1 par Littelfuse et IXDH20N120 par Littelfuse. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Littelfuse
IXDH20N120D1 - 1200V 38A NPT IGBT with Diode | TO-247AD | Littelfuse
IXDH20N120D1 ✓ ActifComparaison des spécifications
| Paramètre | IXDH20N120D1 | IXDH20N120 |
|---|---|---|
| Marque | Littelfuse | Littelfuse |
| Catégorie | IGBTs | IGBTs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,30 | $5,20 |
| Polarity | N-Channel | — |
| Technology | NPT (Non-Punch Through) IGBT with co-packaged FRED | — |
| Collector-Emitter Voltage (VCES) | 1200 V | 1200 V |
| Gate-Emitter Voltage (VGES) | +/- 20 V | — |
| Continuous Collector Current IC25 | 38 A (at TC = 25 C) | — |
| Continuous Collector Current IC90 | [DATA_NEEDED: IC90 value] | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | [DATA_NEEDED: pulsed collector current 1 ms] |
| Maximum Power Dissipation (PC) | 200 W | — |
| Tension de saturation collecteur-émetteur (Vce(sat)) | 3.0 V typ at IC = 20 A | — |
| Gate Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th) value] | — |
| RBSOA | Square RBSOA at 1200 V / 38 A (snubberless hard switching) | Square (no latch-up) at VGE = 15 V, Rg = 20 ohm, TJ up to 150 C |
| Short Circuit Withstand Time (tSC) | [DATA_NEEDED: tSC value] | — |
| Operating Junction Temperature (TJ) | -55 C to +150 C | — |
| Storage Temperature (Tstg) | -55 C to +150 C | [DATA_NEEDED: storage temperature range] |
| Package Type | TO-247AD (3-pin with tab) | — |
| Type de montage | Through Hole | Through Hole |
| Integrated Diode | Yes - co-packaged FRED (D1 variant) | — |
| Statut RoHS | Compliant | ROHS3 Compliant |
| Manufacturer | — | IXYS (acquired by Littelfuse) |
| Part Number | — | IXDH20N120 |
| Device Type | — | NPT (Non-Punch Through) IGBT |
| Continuous Collector Current (IC25) | — | 38 A |
| Gate-Emitter Voltage (VGES, continuous) | — | +/- 20 V |
| Gate-Emitter Voltage (VGEM, transient) | — | [DATA_NEEDED: VGEM transient rating] |
| Power Dissipation (PC) | — | 200 W |
| Junction Temperature (TJ) | — | -40C to +150C [DATA_NEEDED: max TJ] |
| Short-Circuit Withstand (tSC) | — | 10 us minimum at VCE = VCES, VGE = +/- 15 V, TC = 25 C [DATA_NEEDED: exact value] |
| Diode Option | — | Optional ultra-fast FRED (D1 suffix variant: IXDH20N120D1) |
| Boîtier | — | TO-247AD (3-lead) |
| Operating Mode | — | N-Channel IGBT |