IXDH20N120D1 vs IXDH20N120 Comparação
Comparação detalhada lado a lado de IXDH20N120D1 por Littelfuse e IXDH20N120 por Littelfuse. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Littelfuse
IXDH20N120D1 - 1200V 38A NPT IGBT with Diode | TO-247AD | Littelfuse
IXDH20N120D1 ✓ AtivoComparação de especificações
| Parâmetro | IXDH20N120D1 | IXDH20N120 |
|---|---|---|
| Marca | Littelfuse | Littelfuse |
| Categoria | IGBTs | IGBTs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $3,30 | $5,20 |
| Polarity | N-Channel | — |
| Technology | NPT (Non-Punch Through) IGBT with co-packaged FRED | — |
| Collector-Emitter Voltage (VCES) | 1200 V | 1200 V |
| Gate-Emitter Voltage (VGES) | +/- 20 V | — |
| Continuous Collector Current IC25 | 38 A (at TC = 25 C) | — |
| Continuous Collector Current IC90 | [DATA_NEEDED: IC90 value] | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | [DATA_NEEDED: pulsed collector current 1 ms] |
| Maximum Power Dissipation (PC) | 200 W | — |
| Tensão de saturação coletor-emissor (Vce(sat)) | 3.0 V typ at IC = 20 A | — |
| Gate Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th) value] | — |
| RBSOA | Square RBSOA at 1200 V / 38 A (snubberless hard switching) | Square (no latch-up) at VGE = 15 V, Rg = 20 ohm, TJ up to 150 C |
| Short Circuit Withstand Time (tSC) | [DATA_NEEDED: tSC value] | — |
| Operating Junction Temperature (TJ) | -55 C to +150 C | — |
| Storage Temperature (Tstg) | -55 C to +150 C | [DATA_NEEDED: storage temperature range] |
| Package Type | TO-247AD (3-pin with tab) | — |
| Tipo de montagem | Through Hole | Through Hole |
| Integrated Diode | Yes - co-packaged FRED (D1 variant) | — |
| Status RoHS | Compliant | ROHS3 Compliant |
| Manufacturer | — | IXYS (acquired by Littelfuse) |
| Part Number | — | IXDH20N120 |
| Device Type | — | NPT (Non-Punch Through) IGBT |
| Continuous Collector Current (IC25) | — | 38 A |
| Gate-Emitter Voltage (VGES, continuous) | — | +/- 20 V |
| Gate-Emitter Voltage (VGEM, transient) | — | [DATA_NEEDED: VGEM transient rating] |
| Power Dissipation (PC) | — | 200 W |
| Junction Temperature (TJ) | — | -40C to +150C [DATA_NEEDED: max TJ] |
| Short-Circuit Withstand (tSC) | — | 10 us minimum at VCE = VCES, VGE = +/- 15 V, TC = 25 C [DATA_NEEDED: exact value] |
| Diode Option | — | Optional ultra-fast FRED (D1 suffix variant: IXDH20N120D1) |
| Encapsulamento | — | TO-247AD (3-lead) |
| Operating Mode | — | N-Channel IGBT |