K4A8G045WB-BCRC vs K4A8G165WB-BCRC Vergleich
Detaillierter Direktvergleich von K4A8G045WB-BCRC von Samsung Electronics und K4A8G165WB-BCRC von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung
K4A8G045WB-BCRC ✓ Aktiv
Spezifikationsvergleich
| Parameter | K4A8G045WB-BCRC | K4A8G165WB-BCRC |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,95 | $12,57 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | — |
| Speicherorganisation | 2G x 4 | — |
| Speed | 2400 Mbps | — |
| Supply Voltage (VDD/VDDQ) | 1.2 V | — |
| Process Technology | Samsung B-die | — |
| Schnittstelle | CMOS, differential clock (CK/CK#) | DDR4 (Double Data Rate, synchronous) |
| Refresh Cycles | 8192 | — |
| Maximum Supply Current | 211.7 mA | — |
| Betriebstemperatur | 0 C to 85 C | -40C to +95C |
| Gehäuse | 78-ball FBGA (PBGA78) | 96-ball FBGA (PBGA96) |
| Terminals | 78 | — |
| Montageart | Surface Mount | Surface Mount |
| Key DDR4 Features | Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset | — |
| DLL Mode | Timing specified for DLL-enabled operation | — |
| RoHS-Status | Compliant | Compliant |
| Speichergröße | — | 8 Gb (1 GB) |
| Memory Organization | — | 512M x 16 |
| Datenrate | — | 2400 Mbps (PC4-19200) |
| Versorgungsspannung | — | 1.2 V (1.14 V to 1.26 V) |
| Technology | — | CMOS DRAM, Samsung 8Gb B-die |
| Ball Pitch | — | 0.8 mm |
| On-Die Termination | — | Yes (ODT with dynamic ODT) |
| ZQ Calibration | — | Yes |
| CRC / CA Parity | — | Yes (CRC function) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Refresh | — | Auto-refresh and self-refresh |