K4A8G045WB-BCRC vs K4A8G165WB-BCRC Comparison

Detailed side-by-side comparison of K4A8G045WB-BCRC by Samsung Electronics and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G045WB-BCRC

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC βœ“ Active
Samsung Electronics
K4A8G165WB-BCRC K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC βœ“ Active

Specification Comparison

Parameter K4A8G045WB-BCRC K4A8G165WB-BCRC
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.95 $12.57
Memory Type DDR4 SDRAM DDR4 SDRAM (DRAM, volatile)
Density 8 Gb β€”
Organization 2G x 4 β€”
Speed 2400 Mbps β€”
Supply Voltage (VDD/VDDQ) 1.2 V β€”
Process Technology Samsung B-die β€”
Interface CMOS, differential clock (CK/CK#) DDR4 (Double Data Rate, synchronous)
Refresh Cycles 8192 β€”
Maximum Supply Current 211.7 mA β€”
Operating Temperature 0 C to 85 C -40C to +95C
Package 78-ball FBGA (PBGA78) 96-ball FBGA (PBGA96)
Terminals 78 β€”
Mounting Type Surface Mount Surface Mount
Key DDR4 Features Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset β€”
DLL Mode Timing specified for DLL-enabled operation β€”
RoHS Status Compliant Compliant
Memory Size β€” 8 Gb (1 GB)
Memory Organization β€” 512M x 16
Data Rate β€” 2400 Mbps (PC4-19200)
Supply Voltage β€” 1.2 V (1.14 V to 1.26 V)
Technology β€” CMOS DRAM, Samsung 8Gb B-die
Ball Pitch β€” 0.8 mm
On-Die Termination β€” Yes (ODT with dynamic ODT)
ZQ Calibration β€” Yes
CRC / CA Parity β€” Yes (CRC function)
Auto Precharge β€” Yes
Asynchronous Reset β€” Yes
Refresh β€” Auto-refresh and self-refresh

Datasheets & Resources

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