K4A8G085WB vs K4A8G085WB-BITD Vergleich
Detaillierter Direktvergleich von K4A8G085WB von Samsung Electronics und K4A8G085WB-BITD von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A8G085WB | K4A8G085WB-BITD |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,20 | $3,80 |
| Speichertyp | DDR4 SDRAM (B-die) | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Speicherorganisation | 1G x 8 | 1G x 8 |
| Versorgungsspannung | 1.2 V | 1.2 V |
| Gehäuse | 78-pin FBGA | 78FBGA |
| Montageart | Surface Mount | Surface Mount |
| Operating Mode | DLL Enabled mode (per datasheet) | — |
| Speed Grade Suffixes | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) | — |
| Datenrate | [DATA_NEEDED: speed grade data rate in Mbps] | 2666 Mbps |
| tCL/cas latency | [DATA_NEEDED: CAS latency] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40°C to +95°C |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x] | — |
| Bank Groups | [DATA_NEEDED: bank/bank group count] | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Termination Voltage (VTT) | [DATA_NEEDED: VTT value] | — |
| Anzahl der Pins | — | 78 |
| CAS-Latenz | — | [DATA_NEEDED: CAS Latency] |
| Row Cycle Time (tRC) | — | [DATA_NEEDED: tRC] |
| Refresh Cycle Time (tRFC) | — | [DATA_NEEDED: tRFC] |
| Schnittstelle | — | Parallel |
| Lead-Free | — | Yes |