K4AAG085WA-BCRC vs K4AAG085WM-BCRC Vergleich
Detaillierter Direktvergleich von K4AAG085WA-BCRC von Samsung Electronics und K4AAG085WM-BCRC von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4AAG085WA-BCRC | K4AAG085WM-BCRC |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,10 | $1,00 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | [DATA_NEEDED: exact density in Gb] |
| Speicherorganisation | 2G x 8 | x8 |
| Versorgungsspannung | 1.2 V | — |
| Schnittstelle | Parallel, DDR4 | SSTL12 |
| Gehäuse | 78FBGA (78-ball Fine-Pitch Ball Grid Array) | 78-ball FBGA |
| Betriebstemperatur | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Montageart | Surface Mount | Surface Mount |
| Data Width | 8 bit | — |
| Generation | DDR4 | — |
| Speed Grade Suffix | BCRC | — |
| Maximum Data Rate | [DATA_NEEDED: maximum data rate (Mbps) for BCRC speed grade] | — |
| CAS-Latenz | [DATA_NEEDED: CAS latency for BCRC speed grade] | [DATA_NEEDED: CL of -BCRC speed grade] |
| On-Die Termination | Yes (DDR4 ODT) | — |
| Refresh | Self-refresh and auto-refresh (DDR4 standard) | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Family | K4AAG085WA (16Gb 2Gx8 DDR4 family) | — |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Max Data Rate | — | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) |
| Architecture | — | Bank-group DDR4 |
| Termination | — | On-Die Termination (ODT) |
| Clock | — | Differential clock CK/CK# |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |