Samsung Electronics

K4AAG085WA-BCRC - 16Gb DDR4 SDRAM 2Gx8 FBGA | Samsung

Teilenummer: K4AAG085WA-BCRC ✓ Aktiv
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1.2 V Vdss 78FBGA (78-ball Fine-Pitch Ball Grid Array) Package BCRC Speed DDR4 SDRAM Memory
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Preis aktualisiert: 2026-09-03
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1 $8.51 $8,51
10 $7.9 $79,00
100 $7.2 $720,00
500 $6.65 $3.325,00
1.000 $6.1 $6.100,00
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K4AAG085WA-BCRC Übersicht

The Samsung K4AAG085WA-BCRC is a 16 Gbit DDR4 SDRAM memory chip organized as 2G x 8, operating from a single 1.2 V supply and housed in a 78-ball FBGA (78FBGA) surface-mount package. It belongs to Samsung's high-volume DDR4 DRAM family built to deliver top speed, bandwidth, and reliability with lower energy consumption than previous DDR generations.

DDR4 SDRAM is a synchronous dynamic random-access memory and the fourth generation of the DDR (Double Data Rate) family, itself a descendant of SDRAM within the broader memory IC hierarchy (DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 SDRAM). DDR4 transfers data on both clock edges, doubling effective bandwidth versus DDR3 at the same clock, and reduces operating voltage from 1.5 V/1.35 V down to 1.2 V, which cuts both dynamic power and heat in dense memory subsystems.

Key features of the K4AAG085WA-BCRC include 16 Gbit density in a x8 organization, a commercial operating temperature range of 0C to +85C (indicated by the C suffix in the speed grade), the compact 78FBGA lead-free package, and DDR4 power efficiency at 1.2 V. The 8-bit data width allows memory controllers to build wide 64-bit or wider buses with a multiple of eight devices per rank.

Architecturally, the device integrates Samsung's DDR4 core with bank-group-based data masking and burst chop support, on-die termination (ODT) for signal integrity, and standard JEDEC DDR4 command and address timing. Ball-map compatibility within the K4AAG085WA family (BCWE at 3200 Mbps, BCTD at 2400 Mbps) allows speed-grade substitutions without PCB changes.

Typical applications include PC and server DRAM modules (UDIMM, RDIMM), embedded and industrial motherboards, networking switches and routers, set-top boxes, and graphics or acceleration cards that require high-density x8 DRAM.

Design consideration: DDR4 routing requires length-matched address/command groups and fly-by termination; verify the exact maximum data rate of the BCRC speed grade against the official Samsung datasheet before setting memory-controller timing.

This page synthesizes verified distributor data, drop-in speed-grade alternatives, and practical design notes not found in the manufacturer datasheet alone.

Drop-in-Alternativen für K4AAG085WA-BCRC – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.

Varianten dieser Serie

Modelle derselben Serie, die drop-in-kompatibel sind mit K4AAG085WA-BCRC (gleiche Bauform und Footprint) – abweichend in Interface, Package, Density, Operating Temperature, RoHS Status.

Samsung Electronics
Interface: Parallel (DDR4)
Package: 78FBGA
Operating Temperature: 0 C to 85 C (commercial grade, per K4AAG085WA family data)
Vergleichen mit K4AAG085WA-BCRC →
Samsung Electronics
Interface: DDR4 parallel, JEDEC DDR4 ballout
Package: 78-ball FBGA (78FBGA)
Density: 16 Gbit (2 GB)
Vergleichen mit K4AAG085WA-BCRC →
Samsung Electronics
Interface: JEDEC DDR4
Package: 78-ball FBGA (9 x 11 mm, 0.8 mm pitch)
Operating Temperature: 0 C to 85 C
Vergleichen mit K4AAG085WA-BCRC →
Samsung Electronics
Interface: SSTL12
Package: 78-ball FBGA
Vergleichen mit K4AAG085WA-BCRC →
Samsung Electronics
Interface: DDR4 (JEDEC-standard)
Package: 78FBGA
Density: 16 Gb
Vergleichen mit K4AAG085WA-BCRC →

Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:

K4AAG085WA-BCWE

✅ Drop-In
Samsung Electronics
📦 78FBGA
DDR4 SDRAM · 16 Gbit · 2G x 8 · 3200 Mbps (DDR4-3200) · 1.2 V · 1.14 V to 1.26 V · 0 C to 85 C · 78-ball FBGA (9 x 11 mm, 0.8 mm pitch)

✓ Auf Lager

$7.24 / Stück

Datenblatt ansehen →

K4AAG085WA-BCTD

✅ Drop-In
Samsung Electronics
📦 78FBGA
DDR4 SDRAM · 16 Gbit (2 GB) · 2G x 8 · 2666 Mbps · 1.2 V · 78-ball FBGA (78FBGA) · 0C to +85C · DDR4-2666 (-BCTD)

✓ Auf Lager

$10.18 / Stück

Datenblatt ansehen →

K4AAG085WA-BCPB

✅ Drop-In ⚠️ Spezifikationen ungeprüft
Samsung Electronics
📦 78FBGA
DDR4 SDRAM · 16 Gbit · 2G x 8 · 1.2 V · 78FBGA · Surface Mount · 0 C to 85 C (commercial grade, per K4AAG085WA family data)

✓ Auf Lager

$6.92 / Stück

Datenblatt ansehen →

K4AAG085WA-BCRC Technische Daten

Speichertyp DDR4 SDRAM
Density 16 Gbit
Speicherorganisation 2G x 8
Versorgungsspannung 1.2 V
Schnittstelle Parallel, DDR4
Gehäuse 78FBGA (78-ball Fine-Pitch Ball Grid Array)
Betriebstemperatur 0C to +85C
Montageart Surface Mount
Data Width 8 bit
Generation DDR4
Speed Grade Suffix BCRC
On-Die Termination Yes (DDR4 ODT)
Refresh Self-refresh and auto-refresh (DDR4 standard)
RoHS-Status Compliant
Family K4AAG085WA (16Gb 2Gx8 DDR4 family)

K4AAG085WA-BCRC 78fbga (78-ball fine-pitch ball grid array) Pinbelegungsleitfaden

Pinbelegung für K4AAG085WA-BCRC (78fbga (78-ball fine-pitch ball grid array)-Gehäuse). Pin-Nummerierung, Funktionen und Anschlussdiagramme sind im Herstellerdatenblatt definiert. Entnehmen Sie diesem den genauen Footprint und Lötrichtlinien.

Pinbelegungsdiagramm für K4AAG085WA-BCRC im 78fbga (78-ball fine-pitch ball grid array)-Gehäuse

Keine detaillierten Pinbelegungsdaten verfügbar für K4AAG085WA-BCRC.

Siehe die Datenblatt für die vollständige Pin-Konfiguration.

Typische Anwendungen

K4AAG085WA-BCRC ist geeignet für 6 Anwendungs: PC and Server DRAM Modules, Embedded and Industrial Motherboards, Networking Switches and Routers, Set-Top Boxes and Smart TV Platforms, Graphics and Accelerator Cards, Test, Measurement, and Industrial PCs.

🖥️

PC and Server DRAM Modules

The K4AAG085WA-BCRC is a primary component for UDIMM, RDIMM, and SODIMM memory modules, where eight or more x8 devices form a 64-bit wide rank totaling 16 GB per rank. Its 16 Gbit density halves chip count versus 8 Gbit parts, cutting assembly cost and reducing rank load on the fly-by address/command bus. Operating at 1.2 V it keeps module power within JEDEC DDR4 budgets, and the commercial 0C to +85C rating matches desktop and datacenter ambient conditions. Memory controllers at DDR4-2666 class timing must be verified against the BCRC binning table during module qualification.

🏭

Embedded and Industrial Motherboards

Industrial controllers, gateways, and embedded x86 or ARM motherboards use soldered-down K4AAG085WA-BCRC devices to provide 2 to 16 GB of DDR4 main memory without SO-DIMM sockets, improving vibration resistance and reducing height. The 78FBGA footprint suits fine-pitch BGA assembly on standard 6 to 8 layer PCBs, and 1.2 V operation simplifies the power tree (one VDD rail plus VPP). Designers should confirm the controller's maximum supported data rate against the BCRC speed bin and follow Samsung's DDR4 layout guidelines for fly-by termination and per-byte length matching.

🌐

Networking Switches and Routers

Enterprise switches, routers, and telecom appliances rely on high-density x8 DDR4 like the K4AAG085WA-BCRC for packet buffers, routing tables, and control-plane software memory. The 2G x 8 organization lets network processors build 64-bit or 128-bit buses with 8 to 16 devices, and the 16 Gbit density keeps buffer depth high while limiting component count on crowded line cards. Its 1.2 V supply and commercial temperature range fit forced-air-cooled equipment, while the BGA package withstands sustained thermal cycling typical of 24/7 networking hardware.

📺

Set-Top Boxes and Smart TV Platforms

Broadcast and OTT set-top boxes, smart TVs, and media players use soldered DDR4 such as the K4AAG085WA-BCRC to feed 4K video decode buffers and application memory. One or two 16 Gbit x8 devices provide 2 to 4 GB, sufficient for Android TV and Linux middleware stacks, while the 1.2 V rail helps meet energy-star style standby and active power targets. The compact 78FBGA supports low-profile enclosure designs, and the commercial 0C to +85C range covers living-room thermal environments with margin.

🔧

Graphics and Accelerator Cards

Entry-level GPUs, AI inference accelerators, and FPGA accelerator cards use arrays of x8 DDR4 like the K4AAG085WA-BCRC as high-capacity workspace memory when GDDR6 bandwidth is unnecessary. Sixteen devices on a 128-bit bus yield 32 GB per card, attractive for model caching and frame buffering. The 78FBGA ball map supports dense double-sided layout, and DDR4 on-die termination eases multi-drop signal integrity at 2666 Mbps-class rates. Thermal design should budget airflow across BGA packages since sustained memory bandwidth keeps junction temperatures elevated.

🖥️

Test, Measurement, and Industrial PCs

Bench instruments, industrial PCs, and data-acquisition platforms deploy the K4AAG085WA-BCRC for main memory where 16 Gbit per chip maximizes capture depth and software workspace in a limited board area. Oscilloscope and logic-analyzer backends in particular value per-chip density to stream and store long record lengths, and the x8 organization allows ECC implementation with standard 72-bit DIMM-style arithmetic. The commercial temperature rating suits laboratory and conditioned industrial enclosures; fanless or wide-temperature systems should qualify an industrial binning suffix instead.

What is the Samsung K4AAG085WA-BCRC?
The Samsung K4AAG085WA-BCRC is a 16 Gbit DDR4 SDRAM organized as 2G x 8, operating at 1.2 V in a 78-ball FBGA package rated 0C to +85C. According to the Samsung DDR4 SDRAM datasheet for the K4AAG085WA, the family delivers higher bandwidth and better reliability at lower energy than DDR3, making this part suitable for PC modules, servers, and embedded memory subsystems built on the x8 DDR4 organization.
What are the key specifications of K4AAG085WA-BCRC that engineers should know?
Key specifications are: 16 Gbit density, 2G x 8 organization, 1.2 V supply, 78FBGA package, and 0C to +85C commercial temperature range, per the Samsung K4AAG085WA datasheet. The BCRC suffix defines the speed grade and binning; engineers should verify the exact maximum data rate and CAS latency in the official Samsung datasheet before configuring memory-controller timing, since binning codes change between product revisions.
Where to download the K4AAG085WA-BCRC datasheet PDF?
The K4AAG085WA datasheet is available for download from datasheet aggregators such as Alldatasheet, and the authoritative source is always the Samsung Semiconductor product page. The Alldatasheet PDF for the K4AAG085WA (DDR4 SDRAM Memory, approximately 961 KB) contains the complete electrical specifications, timing tables, and the 78FBGA ball map. Always confirm the document against Samsung's official portal because commercial speed-grade suffixes such as BCRC may be covered by revision-specific notes.
What is the price of K4AAG085WA-BCRC?
Pricing for the K4AAG085WA family is typically in the range of about $8.51 per unit in single-piece quantities, based on the LCSC listing of the same-die K4AAG085WA-BCWE variant as of 2026-09-04. Volume pricing at 100 to 1000 pieces generally steps down toward the $6 to $7 range depending on market conditions. DRAM spot prices fluctuate significantly, so request a current quote before committing to a bill of materials.
Where to buy K4AAG085WA-BCRC online?
You can buy the K4AAG085WA-BCRC through XAIPART and through memory-focused distributors and marketplaces that carry Samsung DDR4 components, including LCSC and DigiKey Marketplace listings of adjacent family members such as K4A4G085WE-BCRC. Because DRAM availability changes weekly, check stock status on each storefront. Note that the closely related K4AAG085WA-BCWE has been listed as out of stock at some distributors, so lead times for this family can be extended.
Is K4AAG085WA-BCRC in stock and what is the lead time?
Stock status for the K4AAG085WA-BCRC varies by distributor and changes frequently; related family parts such as the K4AAG085WA-BCWE and K4AAG085WA-BCTD have been shown as out of stock on LCSC as of 2026-09-04. For production programs, request quotes from multiple distributors or contact Samsung's sales channel for allocation. Lead times for commodity DRAM in shortage periods have historically ranged from 8 to 26 weeks, so plan buffer stock accordingly.
What is the difference between K4AAG085WA-BCRC and K4AAG085WA-BCWE?
The difference is the speed grade: the K4AAG085WA-BCWE is rated at 3200 Mbps in a 16 Gb, 2G x 8, 1.2 V, 78FBGA configuration, while the BCRC is a lower-binned speed grade of the same die and package. Both share the 0C to +85C commercial temperature range and identical ball maps, so they are footprint-compatible. If your memory controller is configured for 3200 Mbps you need the BCWE; for slower DDR4 rates the BCRC offers a cost advantage.
Can K4AAG085WA-BCWE replace K4AAG085WA-BCRC?
Yes, the K4AAG085WA-BCWE can replace the BCRC on the same PCB in most designs because both use the identical 78FBGA ball map, 2G x 8 organization, 1.2 V supply, and 0C to +85C temperature range. The BCWE is the faster 3200 Mbps bin, which always meets or exceeds a slower BCRC timing requirement when the controller runs at the BCRC's rated speed. Confirm binning and date-code requirements with your memory vendor before making the substitution in volume production.
What is the best drop-in replacement for K4AAG085WA-BCRC?
The best drop-in replacements are same-family Samsung speed grades: K4AAG085WA-BCWE (3200 Mbps, faster bin, same footprint) and K4AAG085WA-BCTD (2400 Mbps, slower bin, same footprint). All share the 78FBGA package, 16 Gbit 2G x 8 organization, 1.2 V supply, and 0C to +85C range. True drop-in status requires verifying that the target DDR4 data rate falls within the replacement part's validated binning; slower bins cannot substitute for faster ones.
Is K4AAG085WA the same as K4AAG085WA-BCRC?
K4AAG085WA is the base part number of the 16 Gbit DDR4 family, and K4AAG085WA-BCRC is a specific ordering code within that family. The trailing suffix letters encode the package option, speed bin, and temperature/quality grade per Samsung's DRAM part-numbering scheme. The datasheet electrical core (16 Gb, 2G x 8, 1.2 V, 78FBGA) is common to the whole family, but timing parameters such as CAS latency and maximum data rate are defined by the suffix, so always design against the full ordering code.
What is the operating voltage and temperature range of K4AAG085WA-BCRC?
The K4AAG085WA-BCRC operates from a single 1.2 V supply and is rated for 0C to +85C ambient (the commercial temperature grade), according to the family specifications listed for the K4AAG085WA DDR4 SDRAM. The 1.2 V operating voltage is a defining DDR4 feature that lowers dynamic power versus DDR3's 1.5 V. Designs operating outside 0C to +85C should look for industrial-grade binning suffixes within Samsung's DDR4 catalog rather than assuming this part qualifies.
How should I design the PCB layout for the 78FBGA DDR4?
Design the PCB with DDR4 best practices: route address/command lines in fly-by topology with series termination, length-match DQ/DM/DQS groups to within tight per-byte skew targets, and use on-die termination (ODT) settings from the Samsung datasheet rather than external termination where possible. Provide a solid, unbroken ground reference plane under all memory traces and dedicate a low-impedance 1.2 V power plane with bulk and 0.1 uF decoupling capacitors at each VDD ball. Follow Samsung's DDR4 design guide for ball breakout fanout rules under the 78FBGA footprint.
When should I choose K4AAG085WA-BCRC over K4A4G085WE-BCRC?
Choose the K4AAG085WA-BCRC when your design needs double the capacity per chip: 16 Gbit versus the 4 Gbit of the K4A4G085WE-BCRC, both in x8 organization and comparable FBGA footprints. Doubling per-device density halves the chip count for a given total memory, saving board area, addressing load, and assembly cost. Choose the 4 Gb part when per-rank granularity, lower power per device, or second-source strategy outweighs density, or when your memory controller has a maximum addressable density limit below 16 Gbit.
Is the K4AAG085WA-BCRC RoHS compliant and lead-free?
Yes, the K4AAG085WA family is offered in RoHS-compliant, lead-free packaging, consistent with Samsung's standard DRAM portfolio policy; distributor listings for family members such as the K4AAG085WA-BCWE on JLCPCB explicitly mark the part as FBGA-78 DRAM, RoHS. Samsung's compliance documentation for the specific ordering code should be downloaded from their product page for formal customer certification, since suffix-level differences can exist for special programs. REACH and halogen-free declarations likewise follow Samsung's standard compliance process per ordering code.

Technische Referenzdaten für K4AAG085WA-BCRC – Vergleich, Designhinweise und Compliance-Informationen.

Auswahlhilfe

Choose the Samsung K4AAG085WA-BCRC when you need maximum per-chip density (16 Gbit, 2G x 8) at a mainstream DDR4 cost point and your memory controller timing is validated for this speed bin; it is ideal for soldered-down embedded memory, modules, and buffering applications. Select K4AAG085WA-BCWE if your design runs at 3200 Mbps or you want upward timing headroom, accepting a price premium. Select K4AAG085WA-BCTD only if the controller operates at 2400 Mbps or below, where it can save cost. If 16 Gbit exceeds your controller's addressable density, step down to K4A8G085WB or K4A4G085WD family parts, which trade capacity for controller compatibility. All alternatives share the same 78FBGA footprint, so PCB reuse across the family is straightforward - always verify the binning table in the current Samsung datasheet before finalizing any speed-grade substitution.

Vergleich mit Alternativen

Parameter Dieses Produkt K4AAG085WA-BCWE K4AAG085WA-BCTD K4AAG085WA-BCPB
Package 78FBGA 78FBGA - same 78FBGA - same 78FBGA - same
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics
Density 16 Gbit 16 Gbit 16 Gbit 16 Gbit
Organization 2G x 8 2G x 8 2G x 8 2G x 8
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V

Wichtigste Unterscheidungsmerkmale

  • 16 Gbit density halves chip count per rank (vs. K4A8G085WB-BCRC)
  • Lower power than DDR3 solutions (vs. K4AAG085WA-BCWE)
  • Footprint-compatible speed-grade ladder (vs. K4AAG085WA-BCTD)

Designhinweise

Route the DDR4 interface with fly-by address/command topology and terminate the clock and CA bus at the last device. Length-match each DQS/DQ byte group tightly (per Samsung DDR4 design guide skew targets) and keep all memory traces over an unbroken ground reference. Provide 0.1 uF decoupling at each VDD/VDDQ ball pair plus bulk capacitance near the 1.2 V regulator. Break out the 78FBGA with via-in-pad or dog-bone fanout on at least a 6-layer stackup to preserve impedance control.

Budget power using the 1.2 V VDD/VDDQ rail plus the VPP rail per the datasheet IDD tables at your target data rate. Estimated: dynamic current scales roughly linearly with data rate, so a controller running a slower bin than the BCRC rating reduces IDD accordingly. Verify that the VRM can supply worst-case refresh-plus-burst current simultaneously, and sequence VPP before or with VDD per Samsung power-up requirements to avoid latch-up during initialization.

Do not substitute a slower speed grade (e.g., BCTD at 2400 Mbps) into a controller configured for a faster DDR4 rate, even though the ball maps are identical; timing violations will cause intermittent errors that fail only at temperature. Also verify the exact BCRC binning values (maximum data rate, CAS latency) in the current Samsung datasheet revision rather than assuming binning codes, since Samsung re-bins parts across die revisions. Finally, confirm MSL and baking requirements before reflow to avoid BGA delamination.

Compliance-Informationen

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Bleifrei
Yes
Halogenfrei
Unknown
Konfliktmineralien
Unknown

RoHS compliance indicated by distributor listing (JLCPCB marks the K4AAG085WA-BCWE family member as RoHS FBGA-78 DRAM). Formal REACH, halogen-free, and conflict-minerals declarations must be obtained from Samsung's product compliance portal for the exact ordering code.

Daten verifiziert am: 2026-09-04 – Daten geprüft und kuratiert vom Bauteil-Engineering-Team von XAIPART

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Verwandte Bauteile & Begriffe

Samsung Electronics Samsung Semiconductor K4AAG085WA-BCRC K4AAG085WA-BCWE K4AAG085WA-BCTD K4A8G085WB-BCRC DDR4 SDRAM DRAM synchronous dynamic random-access memory 78FBGA Fine-Pitch Ball Grid Array 1.2 V supply 16 Gbit density 2G x 8 organization RoHS JEDEC DDR4 on-die termination (ODT) fly-by topology UDIMM / RDIMM modules data rate / CAS latency binning Memory ICs embedded main memory
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