K4AAG085WA-BCTD vs K4AAG085WM-BCRC Vergleich
Detaillierter Direktvergleich von K4AAG085WA-BCTD von Samsung Electronics und K4AAG085WM-BCRC von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4AAG085WA-BCTD | K4AAG085WM-BCRC |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $10,18 | $1,00 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit (2 GB) | [DATA_NEEDED: exact density in Gb] |
| Speicherorganisation | 2G x 8 | x8 |
| Datenrate | 2666 Mbps | — |
| Versorgungsspannung | 1.2 V | — |
| Gehäuse | 78-ball FBGA (78FBGA) | 78-ball FBGA |
| Betriebstemperatur | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Speed Grade | DDR4-2666 (-BCTD) | — |
| Montageart | Surface Mount | Surface Mount |
| Schnittstelle | DDR4 parallel, JEDEC DDR4 ballout | SSTL12 |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Bank Architecture | 16 banks in 4 bank groups (DDR4 standard) | — |
| Burst Length | BL8 (DDR4 standard) | — |
| Application Domain | Computing, networking, industrial memory | — |
| Manufacturing Standard | JEDEC DDR4 SDRAM | — |
| Lead Time / Stock | [DATA_NEEDED: current stock status] | — |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Max Data Rate | — | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) |
| Architecture | — | Bank-group DDR4 |
| Termination | — | On-Die Termination (ODT) |
| CAS-Latenz | — | [DATA_NEEDED: CL of -BCRC speed grade] |
| Clock | — | Differential clock CK/CK# |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |