K4RAH086VB-BIWM vs K4RHE086VB-BCWM Vergleich
Detaillierter Direktvergleich von K4RAH086VB-BIWM von Samsung Electronics und K4RHE086VB-BCWM von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RAH086VB-BIWM | K4RHE086VB-BCWM |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,85 | $7,65 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 24 Gb |
| Datenrate | 5600 Mbps per pin | 5600 Mbps |
| Speicherorganisation | [DATA_NEEDED: organization x4/x8] | 2G x 8 |
| Versorgungsspannung | [DATA_NEEDED: VDD voltage] | 1.1 V |
| Package Type | [DATA_NEEDED: package (FBGA, ball count)] | — |
| Montageart | Surface Mount | Surface Mount |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS Latency (CWL) | Programmable (per Samsung DDR5 16Gb B-die spec) | — |
| DLL | DLL Enabled mode operation | — |
| On-Die Termination | Yes (via Mode Register setting) | — |
| Internal Calibration | Yes (via MPC) | — |
| Asynchronous Reset | Yes | — |
| Posted CAS | Yes | — |
| Betriebstemperatur | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | [DATA_NEEDED: RoHS status] | unknown |
| Maximum Data Rate (family, per spec Rev1.0) | 4800 Mbps per pin (DDR5-4800, general applications) | — |
| Gehäuse | — | 82 FBGA |
| Schnittstelle | — | DDR5 (JEDEC) |
| Configuration | — | x8 |
| Application Segment | — | Server / Data Center / Premium PC |
| Manufacturer | — | Samsung Semiconductor |
| Access Time / CAS Latency | — | [DATA_NEEDED: CAS latency] |
| On-Die ECC | — | [DATA_NEEDED: on-die ECC support] |
| Package Height | — | [DATA_NEEDED: package height] |