K4RAH165VB-BIQK vs PDRQLAKCDF12-00 Vergleich
Detaillierter Direktvergleich von K4RAH165VB-BIQK von Samsung Electronics und PDRQLAKCDF12-00 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics
PDRQLAKCDF12-00 ✓ AktivSpezifikationsvergleich
| Parameter | K4RAH165VB-BIQK | PDRQLAKCDF12-00 |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $13,60 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Speicherorganisation | 1G x 16 | 1G x 16 |
| Datenrate | 4800 Mbps (MT/s) | 7200 Mbps per pin |
| Supply Voltage (VDD) | 1.1 V | — |
| On-Die ECC | Yes | — |
| Auto Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| DLL Enabled Mode | Yes (spec mode per datasheet) | — |
| Gehäuse | [DATA_NEEDED: exact package ball count / FBGA designation] | 102-ball FBGA |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Marke | Samsung Semiconductor | — |
| Speed Bin | — | DDR5-7200 |
| Operating Voltage | — | 1.1 V |
| Montageart | — | Surface Mount |
| Generation | — | DDR5 (improved from 6400 Mbps generation) |
| Schnittstelle | — | JEDEC DDR5 |
| Package Height | — | [DATA_NEEDED: package height] |
| tCK / Cycle Time | — | [DATA_NEEDED: clock cycle time] |
| CAS-Latenz | — | [DATA_NEEDED: CAS latency] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |