K4RBH086VB-BCQK vs K4RAH086VB-BIQK Vergleich
Detaillierter Direktvergleich von K4RBH086VB-BCQK von Samsung Electronics und K4RAH086VB-BIQK von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RBH086VB-BCQK | K4RAH086VB-BIQK |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $4,25 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb |
| Speicherorganisation | 2G x 8 | 2G x 8 |
| Datenrate | 4800 Mbps | 4800 Mbps/pin |
| Supply Voltage (VDD) | 1.1 V | — |
| Schnittstelle | DDR5 (CA bus, ODECC) | DDR5 (CA reduced pin count) |
| On-die ECC | Yes | — |
| Gehäuse | FBGA-82 | 82FBGA |
| Montageart | Surface Mount | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh | [DATA_NEEDED: refresh rate 32ms/64ms] | [DATA_NEEDED: refresh rate specification] |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency at 4800 Mbps] | — |
| Power Supply Rails | VDD/VDDQ 1.1 V (PMIC on module) | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| RoHS-Status | Compliant | Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA) |
| Packaging | [DATA_NEEDED: tray or tape and reel standard quantity] | — |
| Core Supply Voltage | — | 1.1 V (nominal) |
| Configuration | — | X8 |
| Speed Grade | — | BIQK (-BIQK bin) |
| ECC | — | On-die ECC (DDR5 standard) |
| Burst Length | — | 16 / 32 |
| Operating Mode | — | DLL enabled |
| CAS-Latenz | — | [DATA_NEEDED: CAS latency (CL)] |