K4RBH086VB-BCWM vs K4RBH165VB-BCQK Vergleich
Detaillierter Direktvergleich von K4RBH086VB-BCWM von Samsung Electronics und K4RBH165VB-BCQK von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RBH086VB-BCWM | K4RBH165VB-BCQK |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,00 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | — |
| Speicherorganisation | 2G x 8 | 1G x 16 |
| Versorgungsspannung | 1.1 V | [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5] |
| Datenrate | [DATA_NEEDED: data rate for K4RBH speed grade (sister K4RAH086VB grade is 5600 Mbps)] | 4800 Mbps/pin |
| Schnittstelle | Parallel, DDR5 | — |
| Gehäuse | 82-FBGA | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | 0 C to 85 C | 0 C to +85 C |
| Product Status | Mass Production | — |
| Memory Format | Volatile (DRAM) | — |
| Technology | DDR5 SDRAM | — |
| Manufacturer | Samsung Semiconductor | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| On-Die ECC | Yes (per JEDEC DDR5 specification) | — |
| Speichergröße | — | 16 Gb |
| Speed Grade | — | BCQK (4800 Mbps) |
| Self Refresh | — | Auto self-refresh |
| Reset Function | — | Asynchronous reset |
| Error Correction | — | On-chip (on-die) ECC |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Package Type | — | [DATA_NEEDED: exact package code, expected FBGA surface mount] |
| Burst Length | — | [DATA_NEEDED: burst length (BL16 per DDR5 standard)] |