K4RBH086VB-BCWM vs K4RBH165VB-BCWM Vergleich
Detaillierter Direktvergleich von K4RBH086VB-BCWM von Samsung Electronics und K4RBH165VB-BCWM von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RBH086VB-BCWM | K4RBH165VB-BCWM |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $9,85 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Speicherorganisation | 2G x 8 | 1G x 16 |
| Versorgungsspannung | 1.1 V | — |
| Datenrate | [DATA_NEEDED: data rate for K4RBH speed grade (sister K4RAH086VB grade is 5600 Mbps)] | — |
| Schnittstelle | Parallel, DDR5 | — |
| Gehäuse | 82-FBGA | FBGA-106 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | 0 C to 85 C | 0C to +85C |
| Product Status | Mass Production | — |
| Memory Format | Volatile (DRAM) | — |
| Technology | DDR5 SDRAM | — |
| Manufacturer | Samsung Semiconductor | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| On-Die ECC | Yes (per JEDEC DDR5 specification) | Yes |
| Supply Voltage (VDD) | — | 1.1 V |
| Data Rate Class | — | DDR5 5600 Mbps (family per Octopart listing of sibling part) |
| Write CRC | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Operating Mode | — | DLL Enabled |
| Lead Free | — | Yes |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |