K4RBH086VB-BCWM vs K4RBH165VB-BCWM 对比
详细并排对比 K4RBH086VB-BCWM 出自 Samsung Electronics 和 K4RBH165VB-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4RBH086VB-BCWM | K4RBH165VB-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $9.85 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gbit |
| 存储组织 | 2G x 8 | 1G x 16 |
| 电源电压 | 1.1 V | — |
| 数据速率 | [DATA_NEEDED: data rate for K4RBH speed grade (sister K4RAH086VB grade is 5600 Mbps)] | — |
| 接口 | Parallel, DDR5 | — |
| 封装 | 82-FBGA | FBGA-106 |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0 C to 85 C | 0C to +85C |
| Product Status | Mass Production | — |
| Memory Format | Volatile (DRAM) | — |
| Technology | DDR5 SDRAM | — |
| Manufacturer | Samsung Semiconductor | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| On-Die ECC | Yes (per JEDEC DDR5 specification) | Yes |
| Supply Voltage (VDD) | — | 1.1 V |
| Data Rate Class | — | DDR5 5600 Mbps (family per Octopart listing of sibling part) |
| Write CRC | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Operating Mode | — | DLL Enabled |
| Lead Free | — | Yes |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |