K6X0808C1D-BF70T vs K6X0808C1D-GF55000 Vergleich
Detaillierter Direktvergleich von K6X0808C1D-BF70T von Samsung Electronics und K6X0808C1D-GF55000 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
K6X0808C1D-GF55000 ✓ AktivSpezifikationsvergleich
| Parameter | K6X0808C1D-BF70T | K6X0808C1D-GF55000 |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $3,20 |
| Speichertyp | SRAM - Asynchronous | SRAM - Asynchronous |
| Speichergröße | 256 Kbit | 256 Kbit |
| Memory Organization | 32K x 8 | — |
| Memory Interface | Parallel | — |
| Access Time | 70 ns | 55 ns |
| Write Cycle Time - Word, Page | 70 ns | — |
| Voltage - Supply | 4.5 V to 5.5 V | — |
| Betriebstemperatur | -40C to +85C (TA) | [DATA_NEEDED: operating temperature range] |
| Gehäuse | 28-SOP | 28-SOP |
| Montageart | Surface Mount | Surface Mount |
| Process Technology | CMOS | — |
| Address Bus Width | 15 bit (A0-A14) | — |
| Datenbusbreite | 8 bit (I/O0-I/O7) | — |
| Control Signals | CE, OE, WE | CE, OE, WE (active low) |
| I/O Compatibility | TTL compatible | — |
| Refresh Requirement | None (fully static operation) | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Speicherorganisation | — | 32K x 8 |
| Schnittstelle | — | Parallel |
| Versorgungsspannung | — | 5 V |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Operating Current | — | [DATA_NEEDED: operating current] |
| Write Cycle Time | — | [DATA_NEEDED: write cycle time] |
| Ausgangstyp | — | Three-state, common data I/O |
| Memory Format | — | Volatile, no refresh required |
| Technology | — | Low-power CMOS |