K6X0808C1D-BF70T vs K6X0808C1D-GF55000 对比
详细并排对比 K6X0808C1D-BF70T 出自 Samsung Electronics 和 K6X0808C1D-GF55000 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
K6X0808C1D-GF55000 ✓ 量产中规格对比
| 参数 | K6X0808C1D-BF70T | K6X0808C1D-GF55000 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.05 | $3.20 |
| 存储器类型 | SRAM - Asynchronous | SRAM - Asynchronous |
| 存储容量 | 256 Kbit | 256 Kbit |
| Memory Organization | 32K x 8 | — |
| Memory Interface | Parallel | — |
| Access Time | 70 ns | 55 ns |
| Write Cycle Time - Word, Page | 70 ns | — |
| Voltage - Supply | 4.5 V to 5.5 V | — |
| 工作温度 | -40C to +85C (TA) | [DATA_NEEDED: operating temperature range] |
| 封装 | 28-SOP | 28-SOP |
| 安装类型 | Surface Mount | Surface Mount |
| Process Technology | CMOS | — |
| Address Bus Width | 15 bit (A0-A14) | — |
| 数据总线宽度 | 8 bit (I/O0-I/O7) | — |
| Control Signals | CE, OE, WE | CE, OE, WE (active low) |
| I/O Compatibility | TTL compatible | — |
| Refresh Requirement | None (fully static operation) | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| 存储组织 | — | 32K x 8 |
| 接口 | — | Parallel |
| 电源电压 | — | 5 V |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Operating Current | — | [DATA_NEEDED: operating current] |
| Write Cycle Time | — | [DATA_NEEDED: write cycle time] |
| 输出类型 | — | Three-state, common data I/O |
| Memory Format | — | Volatile, no refresh required |
| Technology | — | Low-power CMOS |