K6X0808C1D-BF70T vs K6X0808C1D-GF55T00 Vergleich
Detaillierter Direktvergleich von K6X0808C1D-BF70T von Samsung Electronics und K6X0808C1D-GF55T00 von Samsung Electro-Mechanics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electro-Mechanics
K6X0808C1D-GF55T00 - 32Kx8 SRAM 55ns 28-SOP | Samsung
K6X0808C1D-GF55T00 ✓ AktivSpezifikationsvergleich
| Parameter | K6X0808C1D-BF70T | K6X0808C1D-GF55T00 |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electro-Mechanics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $1,05 |
| Speichertyp | SRAM - Asynchronous | SRAM - Asynchronous |
| Speichergröße | 256 Kbit | 256 Kbit |
| Memory Organization | 32K x 8 | — |
| Memory Interface | Parallel | — |
| Access Time | 70 ns | 55 ns |
| Write Cycle Time - Word, Page | 70 ns | — |
| Voltage - Supply | 4.5 V to 5.5 V | — |
| Betriebstemperatur | -40C to +85C (TA) | [DATA_NEEDED: operating temperature range for GF grade] |
| Gehäuse | 28-SOP | 28-SOP (450 mil) |
| Montageart | Surface Mount | Surface Mount |
| Process Technology | CMOS | — |
| Address Bus Width | 15 bit (A0-A14) | — |
| Datenbusbreite | 8 bit (I/O0-I/O7) | — |
| Control Signals | CE, OE, WE | — |
| I/O Compatibility | TTL compatible | — |
| Refresh Requirement | None (fully static operation) | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Speicherorganisation | — | 32K x 8 |
| Schnittstelle | — | Parallel |
| Clock Frequency | — | N/A (asynchronous) |
| Technology | — | CMOS |
| Versorgungsspannung | — | [DATA_NEEDED: supply voltage range] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Operating Current | — | [DATA_NEEDED: operating current] |
| Data Retention | — | Low data retention voltage supported |
| Packaging Variant | — | Tape & Reel (T00 suffix) |