K6X0808C1D-BF70T vs K6X0808C1D-GF55T00 Comparison

Detailed side-by-side comparison of K6X0808C1D-BF70T by Samsung Electronics and K6X0808C1D-GF55T00 by Samsung Electro-Mechanics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K6X0808C1D-BF70T K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung

K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung

K6X0808C1D-BF70T ✓ Active
Samsung Electro-Mechanics
K6X0808C1D-GF55T00 K6X0808C1D-GF55T00 - 32Kx8 SRAM 55ns 28-SOP | Samsung

K6X0808C1D-GF55T00 - 32Kx8 SRAM 55ns 28-SOP | Samsung

K6X0808C1D-GF55T00 ✓ Active

Specification Comparison

Parameter K6X0808C1D-BF70T K6X0808C1D-GF55T00
Brand Samsung Electronics Samsung Electro-Mechanics
Category DRAM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $1.05
Memory Type SRAM - Asynchronous SRAM - Asynchronous
Memory Size 256 Kbit 256 Kbit
Memory Organization 32K x 8 —
Memory Interface Parallel —
Access Time 70 ns 55 ns
Write Cycle Time - Word, Page 70 ns —
Voltage - Supply 4.5 V to 5.5 V —
Operating Temperature -40C to +85C (TA) [DATA_NEEDED: operating temperature range for GF grade]
Package 28-SOP 28-SOP (450 mil)
Mounting Type Surface Mount Surface Mount
Process Technology CMOS —
Address Bus Width 15 bit (A0-A14) —
Data Bus Width 8 bit (I/O0-I/O7) —
Control Signals CE, OE, WE —
I/O Compatibility TTL compatible —
Refresh Requirement None (fully static operation) —
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Organization — 32K x 8
Interface — Parallel
Clock Frequency — N/A (asynchronous)
Technology — CMOS
Supply Voltage — [DATA_NEEDED: supply voltage range]
Standby Current — [DATA_NEEDED: standby current]
Operating Current — [DATA_NEEDED: operating current]
Data Retention — Low data retention voltage supported
Packaging Variant — Tape & Reel (T00 suffix)

Datasheets & Resources

Browse All Products Create BOM Request Quote