K6X0808C1D-GF55000 vs K6X0808C1D-BF70T Vergleich
Detaillierter Direktvergleich von K6X0808C1D-GF55000 von Samsung Electronics und K6X0808C1D-BF70T von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
K6X0808C1D-GF55000 ✓ AktivSpezifikationsvergleich
| Parameter | K6X0808C1D-GF55000 | K6X0808C1D-BF70T |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,20 | $1,05 |
| Speichertyp | SRAM - Asynchronous | SRAM - Asynchronous |
| Speichergröße | 256 Kbit | 256 Kbit |
| Speicherorganisation | 32K x 8 | — |
| Access Time | 55 ns | 70 ns |
| Schnittstelle | Parallel | — |
| Versorgungsspannung | 5 V | — |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse | 28-SOP | 28-SOP |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40C to +85C (TA) |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Operating Current | [DATA_NEEDED: operating current] | — |
| Write Cycle Time | [DATA_NEEDED: write cycle time] | — |
| Ausgangstyp | Three-state, common data I/O | — |
| Control Signals | CE, OE, WE (active low) | CE, OE, WE |
| Memory Format | Volatile, no refresh required | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Technology | Low-power CMOS | — |
| Memory Organization | — | 32K x 8 |
| Memory Interface | — | Parallel |
| Write Cycle Time - Word, Page | — | 70 ns |
| Voltage - Supply | — | 4.5 V to 5.5 V |
| Process Technology | — | CMOS |
| Address Bus Width | — | 15 bit (A0-A14) |
| Datenbusbreite | — | 8 bit (I/O0-I/O7) |
| I/O Compatibility | — | TTL compatible |
| Refresh Requirement | — | None (fully static operation) |