K6X0808C1D-GF70T00 vs K6X0808C1D-BF70 Vergleich
Detaillierter Direktvergleich von K6X0808C1D-GF70T00 von Samsung Electro-Mechanics und K6X0808C1D-BF70 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electro-Mechanics
K6X0808C1D-GF70T00 - 256Kbit 32Kx8 Async SRAM 70ns | Samsung
K6X0808C1D-GF70T00 ✓ AktivSpezifikationsvergleich
| Parameter | K6X0808C1D-GF70T00 | K6X0808C1D-BF70 |
|---|---|---|
| Marke | Samsung Electro-Mechanics | Samsung Electronics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Ende des Lebenszyklus |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,85 | $1,85 |
| Speichertyp | SRAM - Asynchronous | Asynchronous SRAM (CMOS) |
| Speichergröße | 256 Kbit | — |
| Speicherorganisation | 32K x 8 | 32K x 8 |
| Access Time | 70 ns | 70 ns |
| Schnittstelle | Parallel | Parallel |
| Technology | CMOS | CMOS |
| Versorgungsspannung | 5 V | [DATA_NEEDED: Supply Voltage] |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse | 28-SOP | 28-SOP (PDSO28) |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | 0C to +70C (commercial grade, BF suffix) |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Active Current | [DATA_NEEDED: active current] | — |
| I/O Type | Common Data I/O, TTL compatible | Tri-state, common I/O (DQ0-DQ7) |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Clock / Refresh | Fully static, no clock or refresh required | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Packaging | Tape & Reel (T00 suffix) | — |
| Density | — | 256 Kbit |
| Operating Current (active) | — | [DATA_NEEDED: Operating Current] |
| Standby Current (CMOS) | — | [DATA_NEEDED: Standby Current] |
| Data Retention | — | Volatile (battery-backup capable with CE control) |
| Address Bus | — | A0-A14 (15 address lines) |