K9XXG08U0M - 8Gbit SLC NAND Flash 3.3V | Samsung
Teilenummer: K9XXG08U0M ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $6.9 | $690,00 |
| 500 | $6.2 | $3.100,00 |
| 1.000 | $5.6 | $5.600,00 |
K9XXG08U0M Übersicht
NAND flash is a non-volatile memory technology in which storage cells are connected in series, dramatically reducing cell size and cost per bit compared to NOR flash. Within the memory hierarchy, NAND flash sits between volatile DRAM and masked ROM, providing persistent bulk storage. It is the foundational technology for SSDs, eMMC, USB drives, and embedded storage subsystems, and is accessed through a command-address-data multiplexed 8-bit bus.
Key features of the K9XXG08U0M family include an 8-bit parallel I/O interface, a page-based organization (typical page size for this class is 4KB including spare), block-based erase operation, and the industry-standard Samsung/ONFI-compatible command set shared across the K9F/K9K/K9W generations. The 2.7V to 3.6V supply range supports both 3.3V and 3.0V rails, and the TSOP-I 48 package suits hand-solderable and reflow assembly.
The K9K8G08U0M variant is SLC (single-level cell) based, offering the highest endurance and reliability in the family; the K9G8G08U0M variant is MLC (multi-level cell), doubling effective density economics with lower endurance. Page read at 20 microseconds and typical program/erase performance make the family suitable for solid-state bulk storage.
Typical applications include solid-state drives, USB flash drives, memory cards, set-top boxes, industrial data loggers, and embedded boot storage for legacy platforms requiring parallel NAND.
Design consideration: NAND flash requires external error correction code (ECC) - the host controller must implement ECC over the spare area, and bad blocks identified in the factory-marked table must be managed by a wear-leveling layer.
This page synthesizes datasheet data, distributor cross-references, and drop-in alternative analysis for the K9XXG08U0M family not found on any single manufacturer page.
Drop-in-Alternativen für K9XXG08U0M – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K9XXG08U0M (gleiche Bauform und Footprint) – abweichend in Package, Organization, Density, Memory Type, Cell Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K9K8G08U0M-PCB0
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K9WAG08U1M
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K9XXG08UXM
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K9G8G08U0M-PCB0
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K9KAG08U0M-PCK0
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K9XXG08U0M Grenzwerte & elektrische Eigenschaften
| Speichertyp | NAND Flash |
| Density | 8 G-bit |
| Speicherorganisation | 1G x 8 bit |
| Spare Area | 256 M-bit (per K9K8G08U0M) |
| Versorgungsspannung | 2.7 V to 3.6 V (3.3V device) |
| Schnittstelle | 8-bit parallel NAND (command/address/data multiplexed) |
| Page Read Time | 20 us |
| Gehäuse | 48-pin TSOP-I |
| Montageart | Surface Mount |
| Access Interface Standard | Samsung legacy NAND command set |
| Bad Block Management | Factory bad block marking (host-managed ECC required) |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| ECC Requirement | External ECC by host controller |
K9XXG08U0M 48-pin tsop-i Pinbelegungsleitfaden
Pinbelegung für K9XXG08U0M (48-pin tsop-i-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K9XXG08U0M.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K9XXG08U0M ist geeignet für 6 Anwendungs: Solid-State Storage Modules, Embedded Boot and Code Storage, Industrial Data Loggers, Set-Top Boxes and Consumer Electronics, USB Flash Drives and Memory Cards, Legacy Platform Repair and Sustainment.
Solid-State Storage Modules
The K9XXG08U0M family was designed by Samsung as the most cost-effective solid-state storage solution of its generation, with the K9K8G08U0M's 8G-bit SLC array and 256M-bit spare area enabling reliable FTL (flash translation layer) implementations. In an SSD or storage module, the NAND connects to a controller through the 8-bit multiplexed bus with 20 us page reads providing moderate sustained throughput. The SLC variant's high program/erase endurance made it the preferred choice for write-intensive storage. Because the parts are obsolete, this application today is limited to legacy module repair and re-qualification of existing designs rather than new development.
Empfohlen
Embedded Boot and Code Storage
Industrial and consumer embedded platforms of the TSOP-I NAND era used the K9XXG08U0M family to store boot code, firmware images, and configuration data. The 2.7V to 3.6V supply range matches standard 3.3V microcontroller and SoC rails, eliminating level shifting. Page reads of 20 us allow boot loaders to fetch code quickly even from slow legacy buses. Because parallel NAND is not execute-in-place friendly, a two-stage boot scheme is typical: a small NOR or mask ROM first-stage loader copies the main image from NAND to DRAM. The host controller must implement 1-bit ECC (SLC) plus factory bad-block table handling at every power-up.
Empfohlen
Industrial Data Loggers
Data loggers in factory automation, energy metering, and vehicle telemetry benefit from the K9K8G08U0M's SLC endurance, which typically withstands far more program/erase cycles than MLC alternatives like the K9G8G08U0M-PCB0. The wide 2.7V to 3.6V operating range tolerates noisy industrial 3.3V rails, and the 48-pin TSOP-I package survives vibration better than socketed media. A wear-leveling FTL spreads writes across the 8G-bit array while the spare area holds ECC parity per sector. Designers must reserve margin blocks for runtime bad-block replacement, since industrial write volumes accelerate block wear.
Empfohlen
Set-Top Boxes and Consumer Electronics
Set-top boxes, DVD recorders, and digital cameras of the mid-2000s used the K9XXG08U0M family to buffer EPG data, record media, and store channel tables. The 1G x 8 bit organization with a 4KB-class page size maps efficiently to file systems used by these devices, and the 8-bit NAND interface integrates directly with consumer SoCs of that era that embedded a native NAND controller with hardware ECC. The 3.3V device classification (2.7V to 3.6V) simplifies the power tree. Replacement sourcing today should favor the pin-compatible K9WAG08U1M for capacity-matched repairs of DVR-class platforms.
Empfohlen
USB Flash Drives and Memory Cards
Samsung explicitly positioned the K9K8G08U0M NAND cell as the most cost-effective solution for solid-state applications including USB drives and flash cards. In a USB drive, the NAND pairs with a bridge controller (e.g., generic USB-to-NAND chips) that handles ECC, bad-block mapping, and wear leveling over the 8-bit bus; 20 us page reads and parallel page programming deliver the throughput needed for USB 2.0 speeds. The TSOP-I 48 package fits compact PCB layouts. Cost-optimized revisions substituted the MLC K9G8G08U0M-PCB0, accepting lower endurance in exchange for density economics.
Empfohlen
Legacy Platform Repair and Sustainment
A dominant current use of the K9XXG08U0M family is last-time-buy and repair sourcing for aging industrial equipment, medical devices, and telecom hardware whose designs cannot be changed. Because the parts are obsolete, engineers must qualify pin-compatible family members - K9K8G08U0M-PCB0, K9WAG08U1M, or K9XXG08UXM - all sharing the 48-pin TSOP-I footprint and Samsung legacy command set per the shared family datasheet. Verification should focus on timing parameter deltas and block geometry tables in the FTL configuration rather than hardware redesign, keeping the replacement truly drop-in at board level.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K9XXG08U0M – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K9K8G08U0M-PCB0 | K9WAG08U1M | K9XXG08UXM | K9G8G08U0M-PCB0 | K9KAG08U0M-PCK0 |
|---|---|---|---|---|---|---|
| Package | 48-pin TSOP-I | 48-pin TSOP-I - same | 48-pin TSOP-I - same | 48-pin TSOP-I - same | 48-pin TSOP-I - same | 48-pin TSOP-I - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 8 G-bit (1G x 8) | 8 G-bit (1G x 8) | 16 G-bit class (2G x 8) | 8 G-bit class | 8 G-bit (1G x 8) | 32 G-bit class |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V (3.3V device) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Lifecycle Status | Obsolete | Obsolete (broker stock) | Obsolete (broker stock) | Obsolete (broker stock) | Obsolete (broker stock) | Obsolete (broker stock) |
Wichtigste Unterscheidungsmerkmale
- SLC endurance advantage (vs. K9G8G08U0M-PCB0)
- Capacity-matched density for footprint reuse (vs. K9WAG08U1M)
- Same-family die revision sourcing flexibility (vs. K9XXG08UXM)
Designhinweise
NAND flash never ships perfect: the K9K8G08U0M leaves the factory with valid bit blocks marked in the spare area of block 0 and subsequent invalid blocks. The host must scan the bad-block table at every power-up and must never erase a marked block - erasing destroys the marker permanently and converts a managed defect into data loss. Additionally, program operations must proceed strictly sequentially within a block; partial-page programming and random page order are prohibited and cause corrupt data.
Decouple VCC with at least 0.1 uF ceramic at each supply pin plus a 4.7 uF bulk capacitor per device. Bulk erase and multi-page programming draw current bursts that can droop a weak 3.3V rail below the 2.7V minimum, aborting program/erase mid-operation. If the supply is shared with a radio or motor load, sequence so NAND erase cycles do not coincide with peak loads, and consider a dedicated LDO or ferrite bead isolation for the memory rail.
On the 8-bit multiplexed bus, keep I/O0 through I/O7, CLE, ALE, CE, RE, and WE traces under 10 cm and matched in length where possible. The latch-based command/address interface is timing-sensitive: setup and hold relative to WE and RE rising edges must meet datasheet values across temperature. Add 22-33 ohm series resistors on WE and RE if ringing is observed, since over-shoot on these latches can falsely clock commands into the device.
NAND flash in standby draws negligible power, but sustained program/erase cycling in data-logging products raises die temperature. Estimated: at 15 mW average active power in a 48-pin TSOP-I (theta_JA approximately 90-110 C/W per typical TSOP-48 packages - verify in the datasheet), junction rise is under 2 C, so ambient rating - not self-heating - governs the operating temperature limit. Confirm the exact operating range in the manufacturer datasheet as it was not in the verified data.
Compliance-Informationen
RoHS status not stated in verified web data. The -PCB0 packing-grade suffix on Samsung K9 parts of this era typically denotes RoHS-compliant lead-free production, but this must be confirmed from the official Samsung product page before relying on it.
