K9LUGY8J7D-BCK0 vs K9LUGY8J7D-CCK0 Vergleich

Detaillierter Direktvergleich von K9LUGY8J7D-BCK0 von Samsung Electronics und K9LUGY8J7D-CCK0 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Samsung Electronics
K9LUGY8J7D-BCK0 K9LUGY8J7D-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9LUGY8J7D-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9LUGY8J7D-BCK0 ✓ Aktiv
Samsung Electronics
K9LUGY8J7D-CCK0 K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics

K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics

K9LUGY8J7D-CCK0 ✓ Aktiv

Spezifikationsvergleich

Parameter K9LUGY8J7D-BCK0 K9LUGY8J7D-CCK0
Marke Samsung Electronics Samsung Electronics
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $0,00
Manufacturer Samsung Electronics Samsung Electronics
Product Type 3D V-NAND Flash Memory —
Memory Technology V-NAND (3D NAND flash) —
Density [DATA_NEEDED: density] [DATA_NEEDED: total density (bits)]
Cell Type [DATA_NEEDED: cell type (MLC/TLC/QLC)] —
Speicherorganisation [DATA_NEEDED: organization] —
Schnittstelle [DATA_NEEDED: interface type] [DATA_NEEDED: interface type / toggle DDR mode]
Versorgungsspannung [DATA_NEEDED: VCC range] [DATA_NEEDED: supply voltage (V)]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Program Time (typ) [DATA_NEEDED: tPROG] —
Erase Time (typ) [DATA_NEEDED: tBERS] —
Read Time (typ) [DATA_NEEDED: tR] —
Endurance [DATA_NEEDED: P/E cycles] —
Betriebstemperatur [DATA_NEEDED: temperature range] [DATA_NEEDED: temperature range (C)]
Gehäuse [DATA_NEEDED: package type and dimensions] BGA (surface mount)
Montageart Surface Mount Surface Mount
RoHS-Status unknown [DATA_NEEDED: RoHS status]
Speichertyp — NAND Flash (V-NAND)
Memory Cell Type — TLC (Triple-Level Cell)
Technology — V-NAND (vertical NAND)
Program/Erase Endurance — [DATA_NEEDED: P/E cycles]
Data Retention — [DATA_NEEDED: retention]
Speed Grade Code — CCK0 (per Samsung part-number convention)

Datenblätter & Ressourcen

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