K9LUGY8J7D-BCK0 vs K9LUGY8J7D-CCK0 Comparison
Detailed side-by-side comparison of K9LUGY8J7D-BCK0 by Samsung Electronics and K9LUGY8J7D-CCK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9LUGY8J7D-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9LUGY8J7D-BCK0 ✓ ActiveSamsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ ActiveSpecification Comparison
| Parameter | K9LUGY8J7D-BCK0 | K9LUGY8J7D-CCK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | 3D V-NAND Flash Memory | — |
| Memory Technology | V-NAND (3D NAND flash) | — |
| Density | [DATA_NEEDED: density] | [DATA_NEEDED: total density (bits)] |
| Cell Type | [DATA_NEEDED: cell type (MLC/TLC/QLC)] | — |
| Organization | [DATA_NEEDED: organization] | — |
| Interface | [DATA_NEEDED: interface type] | [DATA_NEEDED: interface type / toggle DDR mode] |
| Supply Voltage | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage (V)] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program Time (typ) | [DATA_NEEDED: tPROG] | — |
| Erase Time (typ) | [DATA_NEEDED: tBERS] | — |
| Read Time (typ) | [DATA_NEEDED: tR] | — |
| Endurance | [DATA_NEEDED: P/E cycles] | — |
| Operating Temperature | [DATA_NEEDED: temperature range] | [DATA_NEEDED: temperature range (C)] |
| Package | [DATA_NEEDED: package type and dimensions] | BGA (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | unknown | [DATA_NEEDED: RoHS status] |
| Memory Type | — | NAND Flash (V-NAND) |
| Memory Cell Type | — | TLC (Triple-Level Cell) |
| Technology | — | V-NAND (vertical NAND) |
| Program/Erase Endurance | — | [DATA_NEEDED: P/E cycles] |
| Data Retention | — | [DATA_NEEDED: retention] |
| Speed Grade Code | — | CCK0 (per Samsung part-number convention) |