K9LUGY8J7D-BCK0 vs K9LUGY8J7D-CCK0 Comparación
Comparación detallada lado a lado de K9LUGY8J7D-BCK0 por Samsung Electronics y K9LUGY8J7D-CCK0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9LUGY8J7D-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9LUGY8J7D-BCK0 ✓ ActivoSamsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ ActivoComparación de especificaciones
| Parámetro | K9LUGY8J7D-BCK0 | K9LUGY8J7D-CCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | 3D V-NAND Flash Memory | — |
| Memory Technology | V-NAND (3D NAND flash) | — |
| Density | [DATA_NEEDED: density] | [DATA_NEEDED: total density (bits)] |
| Cell Type | [DATA_NEEDED: cell type (MLC/TLC/QLC)] | — |
| Organización de memoria | [DATA_NEEDED: organization] | — |
| Interfaz | [DATA_NEEDED: interface type] | [DATA_NEEDED: interface type / toggle DDR mode] |
| Tensión de alimentación | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage (V)] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program Time (typ) | [DATA_NEEDED: tPROG] | — |
| Erase Time (typ) | [DATA_NEEDED: tBERS] | — |
| Read Time (typ) | [DATA_NEEDED: tR] | — |
| Endurance | [DATA_NEEDED: P/E cycles] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: temperature range] | [DATA_NEEDED: temperature range (C)] |
| Encapsulado | [DATA_NEEDED: package type and dimensions] | BGA (surface mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Tipo de memoria | — | NAND Flash (V-NAND) |
| Memory Cell Type | — | TLC (Triple-Level Cell) |
| Technology | — | V-NAND (vertical NAND) |
| Program/Erase Endurance | — | [DATA_NEEDED: P/E cycles] |
| Data Retention | — | [DATA_NEEDED: retention] |
| Speed Grade Code | — | CCK0 (per Samsung part-number convention) |