K9NUGY8R6B-BCQ0 vs K9JUGY8J5C-BCK0 Vergleich
Detaillierter Direktvergleich von K9NUGY8R6B-BCQ0 von Samsung Electronics und K9JUGY8J5C-BCK0 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics
K9NUGY8R6B-BCQ0 ✓ AktivSpezifikationsvergleich
| Parameter | K9NUGY8R6B-BCQ0 | K9JUGY8J5C-BCK0 |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Flash |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | — |
| Product Family | K9NUGY series NAND flash | — |
| Speichertyp | NAND Flash | NAND Flash (V-NAND TLC) |
| Density | [DATA_NEEDED: total density] | 1 Tb |
| Cell Technology | [DATA_NEEDED: SLC/MLC/TLC] | — |
| Speicherorganisation | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Supply Voltage VCC | [DATA_NEEDED: VCC range] | — |
| VCCQ Voltage | [DATA_NEEDED: VCCQ range] | — |
| Schnittstelle | Asynchronous NAND I/O (command/address/data multiplexed) | [DATA_NEEDED: async/DDR or Toggle DDR interface and mode] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: tR] | — |
| Page Program Time | [DATA_NEEDED: tPROG] | — |
| Block Erase Time | [DATA_NEEDED: tBERS] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Data Retention | [DATA_NEEDED: retention] | [DATA_NEEDED: retention specification] |
| Betriebstemperatur | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Package Type | [DATA_NEEDED: package code] | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | unknown | Compliant |
| Cell Type | — | Triple-Level Cell (TLC) |
| Technology | — | Samsung V-NAND (3D) |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range] |
| Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Read Time (typ) | — | [DATA_NEEDED: tR] |
| Gehäuse | — | [DATA_NEEDED: FBGA ball count / package code] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: program/erase endurance] |