K9NUGY8R6B-BCQ0 vs K9JUGY8J5C-BCK0 Comparaison
Comparaison détaillée côte à côte de K9NUGY8R6B-BCQ0 par Samsung Electronics et K9JUGY8J5C-BCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics
K9NUGY8R6B-BCQ0 ✓ ActifComparaison des spécifications
| Paramètre | K9NUGY8R6B-BCQ0 | K9JUGY8J5C-BCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Flash |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | — |
| Product Family | K9NUGY series NAND flash | — |
| Type de mémoire | NAND Flash | NAND Flash (V-NAND TLC) |
| Density | [DATA_NEEDED: total density] | 1 Tb |
| Cell Technology | [DATA_NEEDED: SLC/MLC/TLC] | — |
| Organisation de la mémoire | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Supply Voltage VCC | [DATA_NEEDED: VCC range] | — |
| VCCQ Voltage | [DATA_NEEDED: VCCQ range] | — |
| Interface | Asynchronous NAND I/O (command/address/data multiplexed) | [DATA_NEEDED: async/DDR or Toggle DDR interface and mode] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: tR] | — |
| Page Program Time | [DATA_NEEDED: tPROG] | — |
| Block Erase Time | [DATA_NEEDED: tBERS] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Data Retention | [DATA_NEEDED: retention] | [DATA_NEEDED: retention specification] |
| Température de fonctionnement | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Package Type | [DATA_NEEDED: package code] | — |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | unknown | Compliant |
| Cell Type | — | Triple-Level Cell (TLC) |
| Technology | — | Samsung V-NAND (3D) |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range] |
| Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Read Time (typ) | — | [DATA_NEEDED: tR] |
| Boîtier | — | [DATA_NEEDED: FBGA ball count / package code] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: program/erase endurance] |