M29F400FB55N3F2 vs M29F400FT55N3F2 Vergleich
Detaillierter Direktvergleich von M29F400FB55N3F2 von Micron Technology und M29F400FT55N3F2 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ AktivSpezifikationsvergleich
| Parameter | M29F400FB55N3F2 | M29F400FT55N3F2 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | EEPROM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,95 | $1,51 |
| Speichertyp | NOR Flash | NOR Flash (SLC) |
| Density | 4 Mbit (4194 kbit) | — |
| Speicherorganisation | 256K x 16 / 512K x 8 | 256K x 16 |
| Access Time | 55 ns | 55 ns |
| Versorgungsspannung | 5 V | 5 V |
| Schnittstelle | Parallel | Parallel |
| Boot Block | Bottom boot block | — |
| Betriebstemperatur | -40C to +125C | [DATA_NEEDED: min operating temperature] |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Gehäuse | 48-TSOP I | 44-SO (SOP-44) |
| Montageart | Surface Mount | Surface Mount |
| Standard Package Quantity | 1500 units (Tape & Reel) | — |
| Active/Standby Current | [DATA_NEEDED: active and standby current] | — |
| Erase/Program Endurance | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| VIO Range | [DATA_NEEDED: I/O voltage range] | — |
| RoHS-Status | Compliant (lead-free build per F2 suffix) | — |
| Speichergröße | — | 4 Mbit |
| Block Architecture | — | Top boot block |
| Temperature Grade | — | Auto Grade 3, up to +125C (per Micron ordering code) |
| Compliance Suffix | — | F2 (RoHS-compliant, lead-free plating) |
| Programming Voltage | — | Single supply (no 12 V VPP required) |
| Technology | — | Floating-gate NOR cell, charge-pump program/erase |
| Max Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |