M29F800FT55N3E2 vs M29F800FB55M3E2 Vergleich
Detaillierter Direktvergleich von M29F800FT55N3E2 von Micron Technology und M29F800FB55M3E2 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29F800FT55N3E2 | M29F800FB55M3E2 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,98 | $3,01 |
| Speichertyp | NOR Flash | Parallel NOR Flash |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | 8 Mbit (8389 kbits) |
| Access Time | 55 ns | 55 ns |
| Versorgungsspannung | 5 V | — |
| Schnittstelle | Parallel | — |
| Boot Block Architecture | Top Boot Block | — |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Gehäuse | 48-TSOP I | 44-pin SO (SOP) |
| Montageart | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | — |
| Data Retention | >20 years (typical for family) | — |
| Ready/Busy Output | Yes | — |
| RoHS-Status | Compliant (E suffix = lead-free/RoHS) | Compliant (E suffix, RoHS-compliant package) |
| Speicherorganisation | — | 512K x 16 / 1M x 8 |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block | — | Bottom boot block |
| Automotive Qualification | — | AEC-Q100 (Auto Grade 125C) |
| Program / Erase | — | Embedded byte/word program and erase controller |
| Number of Words | — | 512 k |
| Bits per Word | — | 16 bits |
| Standard Packing | — | Tray |
| Family | — | M29F 200/400/800 5V Parallel NOR Flash |