M29F800FT55N3E2 vs M29F800FB55M3E2 对比
详细并排对比 M29F800FT55N3E2 出自 Micron Technology 和 M29F800FB55M3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29F800FT55N3E2 | M29F800FB55M3E2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.98 | $3.01 |
| 存储器类型 | NOR Flash | Parallel NOR Flash |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | 8 Mbit (8389 kbits) |
| Access Time | 55 ns | 55 ns |
| 电源电压 | 5 V | — |
| 接口 | Parallel | — |
| Boot Block Architecture | Top Boot Block | — |
| 工作温度 | -40C to +125C | -40C to +125C |
| 封装 | 48-TSOP I | 44-pin SO (SOP) |
| 安装类型 | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | — |
| Data Retention | >20 years (typical for family) | — |
| Ready/Busy Output | Yes | — |
| RoHS 状态 | Compliant (E suffix = lead-free/RoHS) | Compliant (E suffix, RoHS-compliant package) |
| 存储组织 | — | 512K x 16 / 1M x 8 |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block | — | Bottom boot block |
| Automotive Qualification | — | AEC-Q100 (Auto Grade 125C) |
| Program / Erase | — | Embedded byte/word program and erase controller |
| Number of Words | — | 512 k |
| Bits per Word | — | 16 bits |
| Standard Packing | — | Tray |
| Family | — | M29F 200/400/800 5V Parallel NOR Flash |