M29F800FT55N3E2 vs M29W800FB70N3E Vergleich
Detaillierter Direktvergleich von M29F800FT55N3E2 von Micron Technology und M29W800FB70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29F800FT55N3E2 | M29W800FB70N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,98 | $0,95 |
| Speichertyp | NOR Flash | NOR Flash |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | 8 Mbit (8388608 bits) |
| Access Time | 55 ns | 70 ns |
| Versorgungsspannung | 5 V | — |
| Schnittstelle | Parallel | Parallel |
| Boot Block Architecture | Top Boot Block | — |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Gehäuse | 48-TSOP I | 48-TSOP (12 x 20 mm), TSOP I |
| Montageart | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | — |
| Data Retention | >20 years (typical for family) | — |
| Ready/Busy Output | Yes | — |
| RoHS-Status | Compliant (E suffix = lead-free/RoHS) | RoHS compliant (plastic TSOP-48) |
| Speicherorganisation | — | 512K x 16 / 1M x 8 |
| Datenbusbreite | — | x8/x16 (BYTE# selectable) |
| Supply Voltage (VCC) | — | up to 3.6 V for program, erase and read |
| Programming Time | — | 10 us per byte/word (typical) |
| Memory Blocks | — | 19 blocks, 1 boot block (bottom - FB configuration) |
| Pin-Anzahl | — | 48 |
| Product Longevity Program | — | No |
| FBGA Code | — | N/A |
| Chipset Validation | — | N/A |