M29W128GL70N3E vs M29W800FT70N3E Vergleich
Detaillierter Direktvergleich von M29W128GL70N3E von Micron Technology und M29W800FT70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W128GL70N3E | M29W800FT70N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Flash | Flash |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $8,65 | $2,05 |
| Speichertyp | NOR Flash (Parallel) | NOR Flash (Parallel) |
| Density | 128 Mbit | 8 Mbit |
| Speicherorganisation | 16M x8 / 8M x16 | 1M x 8 / 512K x 16 |
| Access Time | 70 ns | 70 ns |
| Versorgungsspannung | 2.7 V to 3.6 V (3V/3.3V class) | — |
| Schnittstelle | Parallel | Parallel, address/data bus |
| Boot Block Configuration | Bottom boot (GL suffix) | — |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Gehäuse | 56-pin TSOP | 48-TSOP I (12 x 20 mm, 0.5 mm pitch) |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Automotive Qualification | Automotive grade ordering code (N3E) | — |
| Bus Width Mode | Software-selectable x8/x16 (BYTE# pin) | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase cycles] |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Programming / Erase Supply | — | Single supply at VCC (2.7 V to 3.6 V) |
| Boot Block Location | — | Top boot block (FT variant) |
| Bus Width | — | 8-bit or 16-bit (BYTE pin selectable) |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Block Organization | — | [DATA_NEEDED: block size/organization] |