M29W128GL70N3E vs M29W800FT70N3E Comparación
Comparación detallada lado a lado de M29W128GL70N3E por Micron Technology y M29W800FT70N3E por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W128GL70N3E | M29W800FT70N3E |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Flash | Flash |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $8,65 | $2,05 |
| Tipo de memoria | NOR Flash (Parallel) | NOR Flash (Parallel) |
| Density | 128 Mbit | 8 Mbit |
| Organización de memoria | 16M x8 / 8M x16 | 1M x 8 / 512K x 16 |
| Access Time | 70 ns | 70 ns |
| Tensión de alimentación | 2.7 V to 3.6 V (3V/3.3V class) | — |
| Interfaz | Parallel | Parallel, address/data bus |
| Boot Block Configuration | Bottom boot (GL suffix) | — |
| Temperatura de funcionamiento | -40C to +125C | -40C to +125C |
| Encapsulado | 56-pin TSOP | 48-TSOP I (12 x 20 mm, 0.5 mm pitch) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Automotive Qualification | Automotive grade ordering code (N3E) | — |
| Bus Width Mode | Software-selectable x8/x16 (BYTE# pin) | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase cycles] |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Programming / Erase Supply | — | Single supply at VCC (2.7 V to 3.6 V) |
| Boot Block Location | — | Top boot block (FT variant) |
| Bus Width | — | 8-bit or 16-bit (BYTE pin selectable) |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Block Organization | — | [DATA_NEEDED: block size/organization] |