M29W160ET70N3F vs M29W160EB80ZA3SE Vergleich
Detaillierter Direktvergleich von M29W160ET70N3F von Micron Technology und M29W160EB80ZA3SE von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W160ET70N3F | M29W160EB80ZA3SE |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,80 | $1,35 |
| Speichertyp | Parallel NOR Flash | NOR Flash (Parallel) |
| Speichergröße | 16 Mbit (2 M x 8 / 1 M x 16) | 16 Mbit (2M x8 / 1M x16) |
| Access Time | 70 ns | 80 ns |
| Versorgungsspannung | 3 V / 3.3 V | 2.7 V to 3.6 V |
| Technology | CMOS | — |
| Boot Block Architecture | Top boot | — |
| Bus Configuration | x8 / x16 selectable | — |
| Gehäuse | 48-pin TSOP | 48-TFBGA (6x8 mm, 0.8 mm ball pitch) |
| Montageart | Surface Mount | Surface Mount (BGA) |
| Temperature Grade | Automotive (AEC-Q100) | — |
| Qualification | AEC-Q100 qualified | AEC-Q100 (automotive grade per datasheets.com listing) |
| Packaging | Tape and Reel | Tape & Reel (TR) |
| RoHS-Status | RoHS-compliant package (F option) | Pb-free (SE suffix) |
| Programming Interface | Parallel command set | — |
| Number of Terminals | 48 | — |
| Schnittstelle | — | Parallel (Byte-wide / Word-wide) |
| Speicherorganisation | — | 16 Mbit Boot Block, x8/x16 selectable |
| Betriebstemperatur | — | -40C to +125C |
| Programming Supply | — | Single 3V supply for program, erase and read |
| Technology Family | — | M29W160EB (3rd generation M29W series) |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Erase Block Architecture | — | Boot block (parameter and main blocks) |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |